Rui Chi Datasheet | Specifications & PDF Download

RU6888R N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab

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RU7088 N-Channel Advanced Power MOSFET MOSFET Features • 70V/80A, RDS (ON) =6.5mΩ (Type) VGS=10V IDS=40A • Ultra Low On-Resistance • Exceptional dv/d

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RU7588R N-Channel Advanced Power MOSFET Features • 80V/80A, RDS (ON) =7mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability •

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ÄÚÖà RF ·Å´ó¹Ì¶¨Âë½âÆ÷ ¸ÅÊö CIR2272AN ÊÇÒ»¿îÄÚÖà ËüºÍ ¼¯³Éµç·£¬ ºÏ ½µÍÁË ´Ó¶øó·ùÈļò»¯²úÆç¡£ ¹¦Ü ÓЧµÄÅ»¯Á˲úÆ·ç ¼õÉÙ¹¤ò¡£ ú²³±¾ ·µÄÉè¼Æ¡£ Ò£¿Ø±¨

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Shenzhen Rui Chi Electronics Co., Ltd., KSD-01F/JUC-31 Series 1.Installation size and shape 2.Selling spicifications ITEM 10℃ 15℃ 20℃ 25℃ 30℃ 35℃ 40

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SHENZHEN CHIPRUI MICRO-ELECTRONICS LTD. CIR2272GM ， CIR2262BM 。 38 。。。 。 。。 。、、 。 CIR2272GM ■ COMS ■ ■ RF ■ ■ ■ SOP16 CIR2272GM SOP

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· MS41919 。 ， 。 IR-cut ， 1.1 MS41919  ，256 （） H ±0.5A   LED （）  IR-CUT ，±0.5A  QFN44 （）   MS41919 QFN44(0505X0.750.35)

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RU6199R N-Channel Advanced Power MOSFET Features · 60V/200A RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Gr

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RU6099R N-Channel Advanced Power MOSFET Features • 60V/120A, RDS (ON) =6mΩ (Typ.) @VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability •

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RU75N08R N-Channel Advanced Power MOSFET MOSFET Features • 75V/80A, RDS (ON) =8mΩ (Typ.) @VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab

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Shenzhen Rui Chi Electronics Co., Ltd., KSD9700 Series Produst Description SD9700 series thermal protectors are featured by advanced bimetal disc str

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RU20130L N-Channel Advanced Power MOSFET MOSFET Features • 20V/130A, RDS (ON) =2.2mΩ(Typ.)@VGS=10V RDS (ON) =4.5mΩ(Typ.)@VGS=4.5V • Super High Dense

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RU6199 N-Channel Advanced Power MOSFET Features Pin Description · 60V/200A RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged

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RU7582R N-Channel Advanced Power MOSFET MOSFET Features • 75V/82A, RDS (ON) =7.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resist

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RU75N08 N-Channel Advanced Power MOSFET MOSFET Features • 75V/80A, RDS (ON) =8mΩ VGS=10V IDS=40A • Ultra Low On-Resistance • Exceptional dv/dt capabi

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RU8080R N-Channel Advanced Power MOSFET MOSFET Features • 80V/80A, RDS (ON) =9mΩ(tpy.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistan

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RU6888 N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6.0mΩ (Type) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capa

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RU2020H N-Channel Advanced Power MOSFET MOSFET Features • 20V/20A, RDS (ON) =3.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.8mΩ (Typ.) @ VGS=4.5V RDS (ON) =5.6mΩ

(28 views)