Rui Chi Datasheet | Specifications & PDF Download

RU6888R N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab

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RU7588R N-Channel Advanced Power MOSFET Features • 80V/80A, RDS (ON) =7mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability •

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Shenzhen Rui Chi Electronics Co., Ltd., KSD-01F/JUC-31 Series 1.Installation size and shape 2.Selling spicifications ITEM 10℃ 15℃ 20℃ 25℃ 30℃ 35℃ 40

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RU7088 N-Channel Advanced Power MOSFET MOSFET Features • 70V/80A, RDS (ON) =6.5mΩ (Type) VGS=10V IDS=40A • Ultra Low On-Resistance • Exceptional dv/d

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RU75N08R N-Channel Advanced Power MOSFET MOSFET Features • 75V/80A, RDS (ON) =8mΩ (Typ.) @VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab

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Shenzhen Rui Chi Electronics Co., Ltd., KSD9700 Series Produst Description SD9700 series thermal protectors are featured by advanced bimetal disc str

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RU3080M N-Channel Advanced Power MOSFET Features • 30V/80A, RDS (ON) =2.3mΩ(Typ.)@VGS=10V RDS (ON) =3mΩ(Typ.)@VGS=4.5V • Super High Dense Cell Design

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RU55110R N-Channel Advanced Power MOSFET MOSFET Features • 55V/110A, RDS (ON) =5mΩ(tpy.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resist

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Shenzhen Rui Chi Electronics Co., Ltd., KSD9700 Series Produst Description SD9700 series thermal protectors are featured by advanced bimetal disc str

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RU8205C6 N-Channel Advanced Power MOSFET Features • 20V/6A, RDS (ON) =18mΩ(Typ.)@VGS=4.5V RDS (ON) =23mΩ(Typ.)@VGS=2.5V • Low RDS (ON) • Super High D

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RU7550R N-Channel Advanced Power MOSFET MOSFET Features • 75V/55A, RDS (ON) =11mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • 100% avalanche teste

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RU6199R N-Channel Advanced Power MOSFET Features · 60V/200A RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Gr

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· MS41919 。 ， 。 IR-cut ， 1.1 MS41919  ，256 （） H ±0.5A   LED （）  IR-CUT ，±0.5A  QFN44 （）   MS41919 QFN44(0505X0.750.35)

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RU30P4C6 P-Channel Advanced Power MOSFET Features • -30V/-4A, RDS (ON) =50mΩ(Typ.)@VGS=-10V RDS (ON) =75mΩ(Typ.)@VGS=-4.5V • Low On-Resistance • Supe

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RU6888 N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6.0mΩ (Type) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capa

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RU6888S N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab

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RU30L30M P-Channel Advanced Power MOSFET MOSFET Features • -30V/-30A, RDS (ON) =12mΩ(Typ.)@VGS=-10V RDS (ON) =20mΩ(Typ.)@VGS=-4.5V • Super High Dense

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RU30105L N-Channel Advanced Power MOSFET MOSFET Features • 30V/110A, RDS (ON) =3.2 mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Res

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