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RU6888R N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab

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RU7588R N-Channel Advanced Power MOSFET Features • 80V/80A, RDS (ON) =7mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability •

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RU6199R N-Channel Advanced Power MOSFET Features · 60V/200A RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Gr

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RU7088 N-Channel Advanced Power MOSFET MOSFET Features • 70V/80A, RDS (ON) =6.5mΩ (Type) VGS=10V IDS=40A • Ultra Low On-Resistance • Exceptional dv/d

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RU6099R N-Channel Advanced Power MOSFET Features • 60V/120A, RDS (ON) =6mΩ (Typ.) @VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability •

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RU55110R N-Channel Advanced Power MOSFET MOSFET Features • 55V/110A, RDS (ON) =5mΩ(tpy.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resist

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RU30105L N-Channel Advanced Power MOSFET MOSFET Features • 30V/110A, RDS (ON) =3.2 mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Res

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RU75N08R N-Channel Advanced Power MOSFET MOSFET Features • 75V/80A, RDS (ON) =8mΩ (Typ.) @VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab

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RU7570L N-Channel Advanced Power MOSFET MOSFET Features • 75V/70A, RDS (ON) =9mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Fast Switching and Fu

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RU3065L N-Channel Advanced Power MOSFET MOSFET Features • 30V/65A, RDS (ON) =4mΩ (Typ.)@VGS=10V RDS (ON) =6mΩ (Typ.)@VGS=4.5V • Super High Dense Cell

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RU6888R3 N-Channel Advanced Power MOSFET Features • 68V/88A, RDS (ON) =6mΩ(Typ.)@VGS=10V • Insulation Slug(VISO≥1500VAC) • Ultra Low On-Resistance •

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Shenzhen Rui Chi Electronics Co., Ltd., KSD-01F/JUC-31 Series 1.Installation size and shape 2.Selling spicifications ITEM 10℃ 15℃ 20℃ 25℃ 30℃ 35℃ 40

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RU190N08Q N-Channel Advanced Power MOSFET Features Pin Description · 80V/190A RDS (ON)=3.9mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugge

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RU75150R N-Channel Advanced Power MOSFET MOSFET Features • 75V/148A, RDS (ON) =5.5mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resi

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RU306C N-Channel Advanced Power MOSFET Features • 30V/5A, RDS (ON) =30m (Typ.) @ VGS=10V RDS (ON) =38m (Typ.) @ VGS=4.5V RDS (ON) =110m (Typ.) @ V

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RU1H190R N-Channel Advanced Power MOSFET MOSFET Features • 100V/190A, RDS (ON) =5mΩ (Type) @ VGS=10V,IDS=80A • Ultra Low On-Resistance • Exceptional

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sales.Mr.wang13826508770 www.sztssd.com RUH30J51M Dual Symmetric N-Channel MOSFET Features • 30V/50A, RDS (ON) =3.6mΩ(Typ.)@VGS=10V RDS (ON) =5.5mΩ(

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RU6888 N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6.0mΩ (Type) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capa

(4 views)