Rui Chi Datasheet | Specifications & PDF Download

RU6888R N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab

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RU7088 N-Channel Advanced Power MOSFET MOSFET Features • 70V/80A, RDS (ON) =6.5mΩ (Type) VGS=10V IDS=40A • Ultra Low On-Resistance • Exceptional dv/d

(61 views)

· MS41919 。 ， 。 IR-cut ， 1.1 MS41919  ，256 （） H ±0.5A   LED （）  IR-CUT ，±0.5A  QFN44 （）   MS41919 QFN44(0505X0.750.35)

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RU75N08R N-Channel Advanced Power MOSFET MOSFET Features • 75V/80A, RDS (ON) =8mΩ (Typ.) @VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capab

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RU6199R N-Channel Advanced Power MOSFET Features · 60V/200A RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged · Lead Free and Gr

(27 views)

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(26 views)

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(26 views)

RU30120R N-Channel Advanced Power MOSFET MOSFET Features • 30V/120A, RDS (ON) =2.5mΩ (Typ.) @ VGS=10V RDS (ON) =3.3mΩ (Typ.) @ VGS=4.5V • Super High

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RU6099R N-Channel Advanced Power MOSFET Features • 60V/120A, RDS (ON) =6mΩ (Typ.) @VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability •

(23 views)

RU7588R N-Channel Advanced Power MOSFET Features • 80V/80A, RDS (ON) =7mΩ(Typ.) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capability •

(22 views)

RU8080R N-Channel Advanced Power MOSFET MOSFET Features • 80V/80A, RDS (ON) =9mΩ(tpy.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistan

(22 views)

RU6199 N-Channel Advanced Power MOSFET Features Pin Description · 60V/200A RDS (ON)=2.8 mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugged

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RU8590R N-Channel Advanced Power MOSFET Features • 85V/90A, RDS (ON) =5.8mΩ(Typ.)@VGS=10V • Ultra Low On-Resistance • Fast Switching and Fully Avalan

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RU6888 N-Channel Advanced Power MOSFET MOSFET Features • 68V/88A, RDS (ON) =6.0mΩ (Type) @ VGS=10V • Ultra Low On-Resistance • Exceptional dv/dt capa

(19 views)

RU7088A N-Channel Advanced Power MOSFET MOSFET Features • 65V/88A, RDS (ON) =6mΩ(Typ.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistan

(19 views)

RU6099 N-Channel Advanced Power MOSFET MOSFET Features • 60V/120A, RDS (ON) =6mΩ (Type) VGS=10V IDS=40A • Ultra Low On-Resistance • Exceptional dv/dt

(19 views)

Shenzhen Rui Chi Electronics Co., Ltd., KSD-01F/JUC-31 Series 1.Installation size and shape 2.Selling spicifications ITEM 10℃ 15℃ 20℃ 25℃ 30℃ 35℃ 40

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RU75210R N-Channel Advanced Power MOSFET Features • 75V/210A, RDS (ON) =3.5mΩ(Typ.)@VGS=10V • Reliable and Rugged • 100% avalanche tested • 175°C Ope

(17 views)

RU8205C6 N-Channel Advanced Power MOSFET Features • 20V/6A, RDS (ON) =18mΩ(Typ.)@VGS=4.5V RDS (ON) =23mΩ(Typ.)@VGS=2.5V • Low RDS (ON) • Super High D

(16 views)

RU190N08Q N-Channel Advanced Power MOSFET Features Pin Description · 80V/190A RDS (ON)=3.9mΩ(Typ.) @ VGS=10V ·Avalanche Rated · Reliable and Rugge

(16 views)