S-1011 Datasheet | Specifications & PDF Download

NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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S-1011 Series www.ablicinc.com © ABLIC Inc., 2014-2015 HIGH-WITHSTAND VOLTAGE BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE DETECTOR

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S-1011 Series www.sii-ic.com © Seiko Instruments Inc., 2014-2015 HIGH-WITHSTAND VOLTAGE BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE

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TPS631010, TPS631011 SLVSGO6B – DECEMBER 2022 – REVISED JANUARY 2025 TPS631010 and TPS631011 1.5A Output Current, Buck-Boost Converters in Small Wafer

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[IR1011] IR1011 Photovoltaic Infrared Sensor GENERAL DESCRIPTION IR1011 is the world smallest mid-infrared quantum photo diode, made of InSb. This sur

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2SA1011 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER www.DataSheet4U.com TO-220 Complement to 2SC2073 ABSOLUTE MAXIMUM RATI

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sc Silicon PNP Power Transistor 2SA1011 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Typ.)@ IC= -0.5A ·Collector-Emitter Breakdo

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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations fo

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UM10114 LPC21xx and LPC22xx User manual Rev. 03 — 2 April 2008 www.DataSheet4U.com User manual Document information Info Keywords Content LPC2109/0

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Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification 8.0+0.5 –0.1 Unit: mm 3.2±0.2 ■ Features

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NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed

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FPC1011F3 Area Sensor Package Product Specification Features  Fingerprint area sensor  Hard and scratch resistant protective surface coating  Supe

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54ACT11011, 74ACT11011 TRIPLE 3-INPUT POSITIVE-AND GATES • Inputs Are TTL-Voltage Compatible • Flow-Through Architecture Optimizes PCB Layout • Cente

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Ordering number:ENN544G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1011/2SC2344 High-Voltage Switching, AF Power Amp, 100W Output Predriver App

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INTEGRATED CIRCUITS DATA SHEET TDA1011 2 to 6 W audio power amplifier Product specification File under Integrated Circuits, IC01 November 1982 Phili

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Ordering number : EN*5041A CMOS LSI LC11011-141 Computer Image Signal Processing Full-Color Gray-Scale Processor Preliminaly Overview The LC11011-14

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FLM1011-4F X, Ku-Band Internally Matched FET FEATURES • High Output Power: P1dB = 36.0dBm (Typ.) • High Gain: G1dB = 7.0dB (Typ.) • High PAE: hadd = 2

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