S-1011 Series www.ablicinc.com © ABLIC Inc., 201.
ON Semiconductor
P1011AP06 - Self-Supplied Monolithic Switcher
NCP1010, NCP1011, NCP1012, NCP1013, NCP1014 Self-Supplied Monolithic Switcher for Low StandbyPower Offline SMPS The NCP101X series integrates a fixed.
Inchange Semiconductor
2SA1011 - POWER TRANSISTOR
sc Silicon PNP Power Transistor 2SA1011 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Typ.)@ IC= -0.5A ·Collector-Emitter Breakdo.
Inchange Semiconductor
2SK1011 - N-Channel MOSFET Transistor
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Minimum Lot-to-Lot variations fo.
Motorola
MC10116 - Triple Line Receiver
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Triple Line Receiver The MC10116 is a triple differential amplifier designed for use in sensing differential sig.
Sony Corporation
CXK1011P - CXK1011P/M
For the availability of this product, please contact the sales office. .
Wing Shing Computer
A1011 - 2SA1011
2SA1011 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER www.DataSheet4U.com TO-220 ! Complement to 2SC2073 ABSOLUTE MAXIMUM RATI.
INCHANGE
MJ11011 - PNP Transistor
isc Silicon PNP Darlington Power Transistor MJ11011 DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= -60V(Min.) ·High DC Current Gain- :.
Sanyo Semicon Device
2SA1011 - PNP/NPN Epitaxial Planar Silicon Transistors
Ordering number:ENN544G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1011/2SC2344 High-Voltage Switching, AF Power Amp, 100W Output Predriver App.
Silan Microelectronics
SVT10111ND - 100V N-CHANNEL MOSFET
Silan Microelectronics SVT10111ND_Datasheet 14A, 100V N-CHANNEL MOSFET DESCRIPTION SVT10111ND is an N-channel enhancement mode power MOS field effe.
CSR
CSR1011 - Bluetooth Smart IC
CSR1011 QFN Data Sheet Features ■ Bluetooth® v4.1 specification compliant ■ Bluetooth Smart ■ 128KB memory: 64KB RAM and 64KB ROM ■ Support for Bluet.
SUMITOMO
FLM1011-3F - X / Ku-Band Internally Matched FET
FLM1011-3F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 35.0dBm (Typ.) High Gain: G1dB = 7.5dB (Typ.) High PAE: .
SUMITOMO
FLM1011-8F - X / Ku-Band Internally Matched FET
FLM1011-8F X, Ku-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P1dB = 39.0dBm (Typ.) High Gain: G1dB = 7.0dB (Typ.) High PAE: .
SUMITOMO
FLM1011-15F - X / Ku-Band Internally Matched FET
FLM1011-15F X,Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=42.0dBm(Typ.) ・High Gain: G1dB=7.0dB(Typ.) ・High PAE: ηadd=31%(Typ.) ・B.
Littelfuse
SL1011A500 - Gas Discharge Tubes
Gas Discharge Tubes SL1011A and SL1411A Series SL1011A and SL1411A Series RoHS Description The SL1011A and SL1411A series provides high levels of p.
ETC
KCD1-104-3-201011BB - Switch
KCD1-104-3-201011BB 、： 6A 250VAC/10A 125VAC 8A 125VAC ：≤50mΩ ：≥100MΩ ：≥1500VAC/1min ：≥10000 .
Seiko Instruments
S-1011 - VOLTAGE DETECTOR
S-1011 Series www.sii-ic.com © Seiko Instruments Inc., 2014-2015 HIGH-WITHSTAND VOLTAGE BUILT-IN DELAY CIRCUIT (EXTERNAL DELAY TIME SETTING) VOLTAGE.
FINGERPRINTS
FPC1011C - Area Sensor
FPC1011C Area Sensor Package Product Specification Features • Fingerprint area sensor • Internal A/D • High speed SPI interface • Reduced readout tim.
