S-1333 Datasheet | Specifications & PDF Download

SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1333 Advance Information 176 RGB x 176 Dot Matrix OLED/PLED Segment/Common Driver with Controller Th

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A1333 2 - Precision, High Speed, Hall-Effect Angle Sensor IC with Integrated Diagnostics for Safety-Critical Applications FEATURES AND BENEFITS •

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LF11331/LF13331/LF11332/LF13332/LF11333/LF13333/LF11201/LF13201/LF11202/LF13202 Quad SPST JFET Analog Switches January 1995 LF11331/LF13331/LF11332/

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1333 DESCRIPTION ·With MT-200 package ·High powe

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ST1331, ST1333 ST1353 6-Contact Memory Card IC 272-bit EEPROM with Advanced Security Mechanisms DATA BRIEFING s s s s s s s s s s 5 V Single Supply

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MITSUMI Lithium-Ion Battery Charge Control (1 cell) MM1333 Lithium-Ion Battery Charge Control (1 cell) Monolithic IC MM1333 Outline This IC was dev

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Datasheet Values Refer to PCN-OPT-1225-2022-REV-0 www.vishay.com TSOP131.., TSOP133.., TSOP135.. Vishay Semiconductors IR Receiver Modules for Remo

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LF11331/LF13331/LF11332/LF13332/LF11333/LF13333/LF11201/LF13201/LF11202/LF13202 Quad SPST JFET Analog Switches January 1995 LF11331/LF13331/LF11332/

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Memory Module Specifications KVR1333D3N9/8G 8GB 2Rx8 1G x 64-Bit PC3-10600 CL9 240-Pin DIMM Important Information: The module defined in this data she

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INTEGRATED CIRCUITS DIVISION Parameters Peak Blocking Voltage Load Current On-Resistance (max) Isolation Voltage, Input to Output Ratings 350 130 30

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LF11331/LF13331/LF11332/LF13332/LF11333/LF13333/LF11201/LF13201/LF11202/LF13202 Quad SPST JFET Analog Switches January 1995 LF11331/LF13331/LF11332/

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LF11331/LF13331/LF11332/LF13332/LF11333/LF13333/LF11201/LF13201/LF11202/LF13202 Quad SPST JFET Analog Switches January 1995 LF11331/LF13331/LF11332/

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CBB CB B 13{{PPN} PPN } （） CBB13 Po yp rop y l en e iFFilm ap a c it or PPolypropylene ol m l CCapacitor CBB CBB13 CB B 13 are non-inductively wound

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CBB CB B 13{{PPN} PPN } （） CBB13 Po yp rop y l en e iFFilm ap a c it or PPolypropylene ol m l CCapacitor CBB CBB13 CB B 13 are non-inductively wound

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isc Silicon NPN Power Transistor DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) · Reversed Biased SOA with Inductive Loa

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Datasheet Values Refer to PCN-OPT-1225-2022-REV-HS1 TSOP131..P10TR, TSOP133..P10TR, TSOP135..P10TR www.vishay.com Vishay Semiconductors IR Receive

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ13333/D Designer's SWITCHMODE Series NPN Silicon Power Transistor The MJ13333 trans

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CBB CB B 13{{PPN} PPN } （） CBB13 Po yp rop y l en e iFFilm ap a c it or PPolypropylene ol m l CCapacitor CBB CBB13 CB B 13 are non-inductively wound

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CBB CB B 13{{PPN} PPN } （） CBB13 Po yp rop y l en e iFFilm ap a c it or PPolypropylene ol m l CCapacitor CBB CBB13 CB B 13 are non-inductively wound

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