PSD Two-dimensional PSD S1200, S1300, S1880, S188.
TSC
13007B - TS13007B
TS13007B High Voltage NPN Transistor TO-220 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 400V 700V 8A 3V @.
CAN SHENG
CS13001 - TO-92 Plastic-Encapsulate Transistors
TO-92 Plastic-Encapsulate Transistors CS13001 TRANSISTOR (NPN) FEATURES power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) .
Taiwan Semiconductor
TS13002HV - High Voltage NPN Transistor
TS13002HV High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO BVCBO IC VCE(SAT) 450V 900V 0.8.
Taiwan Semiconductor
TS13005CK - High Voltage NPN Transistor
TS13005CK/RCK High Voltage NPN Transistor TO-126 Pin Definition: TS13005CK 1. Base 2. Collector 3. Emitter TS13005RCK 1. Emitter 2. Collector 3. Ba.
Taiwan Semiconductor
TS13005RCK - High Voltage NPN Transistor
TS13005CK/RCK High Voltage NPN Transistor TO-126 Pin Definition: TS13005CK 1. Base 2. Collector 3. Emitter TS13005RCK 1. Emitter 2. Collector 3. Ba.
Chipanalog
CA-IS1300B25G - Isolated Amplifier
Shanghai Chipanalog Microelectronics Co., Ltd. CA‐IS1300x Version 1.05 CA‐IS1300x 5‐kVRMS Isolated Amplifier for Current Sensing 1 Key Features • D.
Chipanalog
CA-IS1300G25G - Isolated Amplifier
Shanghai Chipanalog Microelectronics Co., Ltd. CA‐IS1300x Version 1.05 CA‐IS1300x 5‐kVRMS Isolated Amplifier for Current Sensing 1 Key Features • D.
Chipanalog
CA-IS1300G05G - Isolated Amplifier
Shanghai Chipanalog Microelectronics Co., Ltd. CA‐IS1300x Version 1.05 CA‐IS1300x 5‐kVRMS Isolated Amplifier for Current Sensing 1 Key Features • D.
Chipanalog
CA-IS1300B25G-Q1 - Isolated Amplifier
Shanghai Chipanalog Microelectronics Co., Ltd. CA‐IS1300B25G‐Q1 Version 1.02 CA‐IS1300B25G‐Q1 5‐kVRMS Isolated Amplifier for Current Sensing 1 Key .
HAMAMATSU
S1300 - Two-dimensional PSD
PSD Two-dimensional PSD S1200, S1300, S1880, S1881, S2044 Non-discrete position sensor utilizing photodiode surface resistance PSD (Position Sensit.
Motorola
MGS13002D - Insulated Gate Bipolar Transistor
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGS13002D/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Si.
ON
MGS13002D - Insulated Gate Bipolar Transistor
MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGS13002D/D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Si.
Panasonic
MAZS1300L - Silicon planar type
Zener Diodes MAZS000 Series Silicon planar type Unit : mm 0.30 ± 0.05 0.30 ± 0.05 For constant voltage, constant-current, waveform clipper and surge.
Panasonic
MAZS1300M - Silicon planar type
Zener Diodes MAZS000 Series Silicon planar type Unit : mm 0.30 ± 0.05 0.30 ± 0.05 For constant voltage, constant-current, waveform clipper and surge.
Taiwan Semiconductor Company
TS13003 - High Voltage NPN Transistor
TS13003 High Voltage NPN Transistor TO-92 Pin Definition: 1. Emitter 2. Collector 3. Base PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC 1.5A VCE(S.
ETC
S13003D - NPN Transistor
S13003D * NPN TO-126 * * TO-126 1. 2. 3. ( Tc=25 ) BVCEO BVCBO BVEBO Icm Pcm Tjm Tstg 400 600 9 1.5 30 150 55 150 V V V A W ( Tc=25 ) BVCEO.
Taiwan Semiconductor
TS13001 - High Voltage NPN Transistor
www.DataSheet4U.com TS13001 High Voltage NPN Transistor BVCEO = 400V BVCBO = 500V Ic = 0.1A VCE (SAT), = 0.5V @ Ic / Ib = 50mA / 10mA Pin assignment.
Taiwan Semiconductor
TS13003A - High Voltage NPN Transistor
TS13003A High Voltage NPN Transistor TO-126 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 450V BVCBO 700V IC 2A VCE(S.
