S80 Datasheet | Specifications & PDF Download

Production specification Silicon Epitaxial Planar Transistor FEATURES  High Collector Current.(IC= 500mA).  Complementary To S8550. Pb Lead-free

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www.DataSheet4U.com NPN General Purpose Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emit

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Silicon Epitaxial Planar Transistor FEATURES z Collector Current.(IC= 1.5A） z Complementary To SS8550. Pb Lead-free z Collector dissipation:PC=300m

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SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • Complimentary to SS8550 Ε Collecto

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Translated from Chinese (Simplified) to English - www.onlinedoctranslator.com Shenzhen Naxinwei Technology Co., Ltd. SHENZHEN NSI WAY TECHNOLOGY NS80

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eTek T25S80-V1.7 ChipSourc DATASHEET TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://www.ChipSourceTek.com E-mail: Sales@ChipSourceT

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SI-TECH SEMICONDUCTOR CO.,LTD Features  VDS=80V,ID=100A Rds(on)(typ)=6.3m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Complia

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NPN Epitaxial Silicon Transistor SS8050 Features • 2 W Output Amplifier of Portable Radios in Class B Push−Pull Operation • Complementary to SS8550 •

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HCS80R850S Dec 2019 HCS80R850S 800V N-Channel Super Junction MOSFET Features • Very Low FOM (RDS(on) X Qg) • Extremely low switching loss • Excelle

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EN25S80 EN25S80 8 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Single power supply operation - Full voltage range: 1.65-1.9

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HMS80N10KA N-Channel Super Trench Power MOSFET Description The HMS80N10KA uses Super Trench technology that is uniquely optimized to provide the most

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SI-TECH SEMICONDUCTOR CO.,LTD S80N08R/S/RN/RP N-Channel MOSFET Features █ 80V,80A,Rds(on)(typ)=6.4mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 1

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EN25S80B (2S) EN25S80B (2S) preliminary 8 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector FEATURES  Single power supply operation – F

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BS801B/02B/04B/06B/08B Touch Key Features · Operating voltage: 2.2V~5.5V · Ultra low standby current: 1.5mA at 3V · Auto-calibration · High reliabilit

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Elektronische Bauelemente SS8050 NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-2

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General Purpose Transistor SS8050-G (NPN) RoHS Device Diagram: 1 : BASE 2 : EMITTER 3 : COLLECTOR 1 Base Collector 3 2 Emitter Maximum Ratings (at

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www.DataSheet4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataShee DataShe

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RS8 SERIES SINGLE-PHASE SILICON BRIDGE www.DataSheet4U.com CHENG- YI ELECTRONIC VOLTAGE RANGE 50 TO 1000 VOLTS CURRENT 8.0 Amperes FEATURES Ideal f

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S8050M Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 NPN 。Silicon NPN transistor in a SOT-23 Plastic Package.  / Features S8550M 。 Comple

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® TM Packaged and Bondable Chips GaAs Schottky Diodes MS8001 – MS8004 Features ● Low-Noise Performance ● High Cut-off Frequency ● Passivated to Enha

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