S80 Datasheet | Specifications & PDF Download

Production specification Silicon Epitaxial Planar Transistor FEATURES  High Collector Current.(IC= 500mA).  Complementary To S8550. Pb Lead-free

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www.DataSheet4U.com NPN General Purpose Transistors ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emit

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Silicon Epitaxial Planar Transistor FEATURES z Collector Current.(IC= 1.5A） z Complementary To SS8550. Pb Lead-free z Collector dissipation:PC=300m

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Translated from Chinese (Simplified) to English - www.onlinedoctranslator.com Shenzhen Naxinwei Technology Co., Ltd. SHENZHEN NSI WAY TECHNOLOGY NS80

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eTek T25S80-V1.7 ChipSourc DATASHEET TEL: +86-0755-27595155 27595165 FAX: +86-0755-27594792 WEB:Http://www.ChipSourceTek.com E-mail: Sales@ChipSourceT

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SI-TECH SEMICONDUCTOR CO.,LTD Features  VDS=80V,ID=100A Rds(on)(typ)=6.3m@Vgs=10V  100% Avalanche Tested  100% Rg Tested  Lead-Free (RoHS Complia

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SI-TECH SEMICONDUCTOR CO.,LTD S80N08R/S/RN/RP N-Channel MOSFET Features █ 80V,80A,Rds(on)(typ)=6.4mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 1

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Elektronische Bauelemente SS8050 NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-2

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SS8050 NPN EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER OF PORTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • Complimentary to SS8550 Ε Collecto

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HCS80R250T Super Junction MOSFET August 2016 HCS80R250T 800V N-Channel Super Junction MOSFET Description ‰ Very Low FOM (RDS(on) X Qg) ‰ Extremely

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Elektronische Bauelemente S8050 NPN Silicon Plastic-Encapsulate Transistors FEATURES Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y

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SS8050 — NPN Epitaxial Silicon Transistor November 2014 SS8050 NPN Epitaxial Silicon Transistor Features • 2 W Output Amplifier of Portable Radios

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EN25S80 EN25S80 8 Megabit 1.8V Serial Flash Memory with 4Kbyte Uniform Sector FEATURES • Single power supply operation - Full voltage range: 1.65-1.9

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INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification SS8050 DESCRIPTION ·Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@

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SS8050 — NPN Epitaxial Silicon Transistor November 2014 SS8050 NPN Epitaxial Silicon Transistor Features • 2 W Output Amplifier of Portable Radios

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SI-TECH SEMICONDUCTOR CO.,LTD N-Channel MOSFET S80N18R/S Features █ 80V,180A,Rds(on)(typ)=3mΩ @Vgs=10V █ High Ruggedness █ Fast Switching █ 100% Av

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UNISONIC TECHNOLOGIES CO., LTD S8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC S8050 is a

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NPN Epitaxial Silicon Transistor SS8050 Features • 2 W Output Amplifier of Portable Radios in Class B Push−Pull Operation • Complementary to SS8550 •

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SS8050 TRANSISTOR (NPN) Features • Complimentary to SS8550 • RoHS compliant package Packing & Order Information 3,000/Reel Graphic symbol Publication

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RS8051, RS8052, RS8054 100kHz, 670nA, Non-Unity Gain, Rail-to-Rail I/O CMOS Operational Amplifier FEATURES • GAIN BANDWIDTH:100kHz • RAIL-TO-RAIL INP

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