SA10 Datasheet | Specifications & PDF Download

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1013 Color TV Verttical Deflection Output Applications Power Switching Applications 2S

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N-Channel MOSFET Applications: • ATX Power • LCD Panel Power ISA10N80A Pb Lead Free Package and Finish VDSS 800V RDS(on)(Typ) ID (Max) 0.8Ÿ 10A

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1048 2SA1048 Audio Frequency Amplifier Applications Unit: mm • Small package • High

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SA5.0 – SA170CA Available 5.0 to 170 Volts, 500 Watts Transient Voltage Suppressors DESCRIPTION This Transient Voltage Suppressor is a high value c

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UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP ep

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B · DESCRIPTION ·With TO-2

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2SA1029, 2SA1030 Silicon PNP Epitaxial Application • Low frequency amplifier • Complementary pair with 2SC458 and 2SC2308 Outline TO-92 (1) 1. Emit

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1069 2SA1069A DESCRIPTION ·With TO-220 package ·

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B · DESCRIPTION ·With TO-2

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DATA SHEET www.onsemi.com PNP Epitaxial Silicon Transistor KSA1010 High Speed High Voltage Switching  Industrial Use  Complement to KSC2334 1 2 3

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Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Complementary to 2SC2295 Unit: mm s Features q q 2.8 –0.3 0.6

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: 2SA1094 I SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : VcE0=~140V • High Transition

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2SA1036K Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package. / Features ，， 2SC2411K 。 La

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PNP Epitaxial Silicon Transistor FEATURES  Low Collector Saturation Voltage. VCE(sat)=-0.4V(Max.)at IC=-3A  Complements the 2SC2562. Pb Lead-free

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UTC 2SA1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector curre

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: I 1 SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER APPLICATIONS. FEATURES • High Breakdown Voltage : Vceo=-160V • High Transition Frequ

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