SA11 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1106 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) ·Good Linear

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Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1104 Features • High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block • 3 dB Bandwidth:

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm •

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UTC MPSA113 NPN EPITAXIAL SILICON TRANSISTOR DARLINGTON TRANSISTOR DESCRIPTION The UTC MPSA113 is a Darlington transistor. 1 FEATURES *Collector-Emit

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www.DataSheet4U.com MSA1162GT1, MSA1162YT1 General Purpose Amplifier Transistors PNP Surface Mount • Moisture Sensitivity Level: 1 • ESD Rating: TBD

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www.DataSheet4U.com MSA1162GT1, MSA1162YT1 General Purpose Amplifier Transistors PNP Surface Mount • Moisture Sensitivity Level: 1 • ESD Rating: TBD

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Click to see this datasheet in Simplified Chinese FSA110 — Audio and Wired-OR USB2.0 Hi-Speed Switch with Negative Signal Capability and Built-in Te

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NICHIA STS-DA1-3860D NICHIA CORPORATION SPECIFICATIONS FOR AMBER LED NCSA119BT-V1 ● Pb-free Reflow Soldering Application ● Built-in ES

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SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 2SA1146 AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SC2706. .. Recommend

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1102 DESCRIPTION ·With TO-3PN package ·Complemen

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) ·High Power Dissipation ·Complement to Type 2

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isc Silicon PNP Power Transistor 2SA1109 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min.) ·High Power Dissipation ·Minimum

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KSA1182 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 PNP 。Silicon PNP transistor in a SOT-23 Plastic Package.  / Features 。 Low frequency

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Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1105 Features • High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block • 3 dB Bandwidth:

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DSA1101/21/05/25 Low-Jitter Precision CMOS Oscillator for Automotive Features • Automotive AEC-Q100 Qualified • Two Rise/Fall Time Options for EMI Re

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Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 5.9± 0.2 Unit:

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KSA1150 KSA1150 Low Frequency Power Amplifier • Collector Dissipation : PC = 300mW • Complement to KSC2710 1 TO-92S 1.Emitter 2. Collector 3. Base

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