AXIAL LEAD TRANSIENT VOLTAGE SUPPRESSORS SA5.0 - S.
Inchange Semiconductor
23
2SA1106 - POWER TRANSISTOR
INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1106 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) ·Good Linear.
Inchange Semiconductor
20
2SA1102 - POWER TRANSISTOR
isc Silicon PNP Power Transistor 2SA1102 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Minimum Lot-t.
Inchange Semiconductor
19
2SA1186 - POWER TRANSISTOR
isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Ty.
Fairchild Semiconductor
17
SA11CA - Transient Voltage Supressors
SA5.0(C)A - SA170(C)A SA5.0(C)A - SA170(C)A Features • Glass passivated junction. • 500W Peak Pulse Power capability on 10/1000 µs waveform. • Excel.
ON Semiconductor
16
2SA1179N - Bipolar Transistor
Ordering number : EN7198B 2SA1179N/2SC2812N Bipolar Transistor (–)50V, (–)150mA, Low VCE(sat), (PNP)NPN Single CPA http://onsemi.com Features • Min.
Microchip
16
DSA1104 - Low-Jitter Precision HCSL Oscillator
DSA1104/24 Low-Jitter Precision HCSL Oscillator for Automotive Features • Automotive AEC-Q100 Qualified • Low RMS Phase Jitter: <1 ps (typ.) • High S.
Fairchild Semiconductor
15
FSA1156 - Low Voltage SPST Analog Switch
FSA1156, FSA1157 — Low-RON, Low-Voltage, SPST Analog Switch January 2016 FSA1156, FSA1157 Low-RON, Low-Voltage SPST Analog Switch Features Maximu.
Silan Microelectronics
15
SA1117 - 1A LDO VOLTAGE REGULATOR
SA1117 1A LDO VOLTAGE REGULATOR DESCRIPTION The SA1117 is a positive low voltage dropout regulator, voltage dropout is only 1.2V at 1A. SA1117 has two.
Toshiba Semiconductor
11
2SA1182 - Silicon PNP Transistor
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applicatio.
Toshiba Semiconductor
11
A1160 - 2SA1160
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm •.
ON Semiconductor
11
FSA1153 - DP3T USB Type C Audio andUART Analog Switch
FSA1153 DP3T USB Type C Audio and UART Analog Switch with OVP Description The FSA1153 is a bi−directional, low power, high speed USB2.0 Type−C, Audio.
Panasonic Semiconductor
10
2SA1124 - Silicon NPN epitaxial planer type Transistor
Transistor 2SA1124 Silicon PNP epitaxial planer type For low-frequency high breakdown voltage amplification Complementary to 2SC2632 5.9± 0.2 Unit: .
infineon
10
SSA11N60C2 - Power Transistor
www.DataSheet4U.com Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • U.
Inchange Semiconductor
10
2SA1110 - POWER TRANSISTOR
isc Silicon PNP Power Transistor 2SA1110 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V (Min) ·Good Linearity of hFE ·Complement .
Hitachi Semiconductor
9
2SA1194 - Silicon PNP Epitaxial Transistor
2SA1194(K) Silicon PNP Epitaxial Application High gain amplifier Outline TO-126 MOD 2 3 1. Emitter 2. Collector 3. Base 1 2 3 1 Absolute Maxi.
Toshiba
9
2SA1164 - SILICON PNP TRANSISTOR
2SA1164 ) ) ) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH FREQUENCY AMPLIFIER APPLICATIONS. LOW FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SW.
Inchange Semiconductor
8
2SA1173 - Silicon PNP Power Transistor
INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-140V(Min) ·Good Linearity .
