SA11 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1106 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) ·Good Linear

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1160 Strobe Flash Applications Medium Power Amplifier Applications 2SA1160 Unit: mm •

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PNP Silicon Transistor KSA1156 Features • High Breakdown Voltage • Low Collector Saturation Voltage • High Speed Switching • This is a Pb−Free Device

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1133 2SA1133A DESCRIPTION ·With TO-220 package ·

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1105 DESCRIPTION ·With TO-3PN package ·High freq

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1106 DESCRIPTION ·With TO-3PN package ·High freq

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isc Silicon PNP Power Transistor 2SA1102 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Minimum Lot-t

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Low-RON, Low-Voltage SPST Analog Switch FSA1156, FSA1157 Description The FSA1156 and FSA1157 are high−performance Single−Pole / Single−Throw (SPST) an

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2SA1193(K) Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SA11

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SA1140 FM RADIO IC FOR DIGITAL TUNING SYSTEM DESCRIPTION The SA1140 is an IF system IC designed for FM car stereo receivers. It features versatile mut

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1104 DESCRIPTION ·With TO-3PN package ·High freq

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isc Silicon PNP Power Transistor 2SA1109 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min.) ·High Power Dissipation ·Minimum

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2SA1163 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1163 Audio Frequency General Purpose Amplifier Applications • High voltage: V

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1135 DESCRIPTION ·With TO-3PN package ·Complemen

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isc Silicon PNP Power Transistor 2SA1110 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V (Min) ·Good Linearity of hFE ·Complement

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1150 2SA1150 Low Frequency Amplifier Applications Unit: mm • High hFE: hFE = 100~32

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2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage an

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isc Silicon PNP Power Transistor DESCRIPTION ·Low collector output capacitance ·High frequency ·Complement to 2SC2705 ·Minimum Lot-to-Lot variations

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