SA130 Datasheet | Specifications & PDF Download

TOSHIBA Discrete Semiconductors Transistor Silicon PNP Epitaxial Type (PCT Process) For General Purpose Switching and Amplifier Applications Featur

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INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1302 DESCRIPTION ·High Current Capability ·High Power Dissipa

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: SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SC3280 . Recommend for 80W High Fidelity Audio Frequency

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: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 1 2SA130 2SA1306A I2SA1306B POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES .

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isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·Complement to Ty

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OSA13009 High Voltage Fast-Switching NPN Power Transistor  Features：  High Switching Speed  Low forward voltage drop  High efficiency and low p

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LAPT 2SA1303 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284) Application : Audio and General Purpose sAbsolute maximum ratings

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: SILICON PNP EPITAXIAL TYPE (PCT PROCESS) 1 2SA1305 POWER AMPLIFIER APPLICATIONS. CAR RADIO AND CAR STEREO OUTPUT STAGE APPLICATIONS. FEATURES . Go

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B DESCRIPTION ·With TO-220F

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1301 DESCRIPTION ·With TO-3PL package ·Complemen

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications 2SA1300 Unit: mm ·

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1308 DESCRIPTION ·With TO-220F package ·Low coll

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LAPT sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SA1303 –150 –150 –5 –14 –3 125(Tc=25°C) 150 –55 to +150 2SA1303 Application :

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isc Silicon PNP Power Transistor 2SA1301 DESCRIPTION ·High Power Dissipation ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Complemen

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:) SILICON PNP EPITAXIAL TYPE (PCT PROCESS) HIGH CURRENT SWITCHING APPLICATIONS. 1Q.3MAX. FEATURES . Low Saturation Voltage : VCE ( sat )=-0.4V(Max

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SavantIC Semiconductor Silicon PNP Power Transistors www.DataSheet4U.com DESCRIPTION ·With TO-220Fa package ·Complement to type 2SC3296 ·High breakdo

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Transistor 2SA1309A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SC3311A Unit: mm 4.0±0.2 3.0±0.2 s Features

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isc Silicon PNP Power Transistors DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min) ·Complement to T

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1305 DESCRIPTION ·With TO-220Fa package ·Low col

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