SATURATION Datasheet | Specifications & PDF Download

IKY150N65EH7 High speed and low saturation voltage 650 V TRENCHSTOP™ IGBT7 technology Final datasheet High speed and low saturation voltage 650 V TRE

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Standard ICs Low saturation voltage type 3-pin regulator BAffT / FP series The BAffT / FP series are fixed positive output low drop-out type, 3-pin v

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Standard ICs Low saturation voltage type 3-pin regulator BAffT / FP series The BAffT / FP series are fixed positive output low drop-out type, 3-pin v

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Features • BVCEO > -20V • IC = -2A Continuous Collector Current • ICM = -4A Peak Pulse Current • Low Saturation Voltage VCE(sat) < -120mV @ -1A • RCE(

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FSB649 FSB649 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with c

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FMMT620 SuperSOT™ 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A DESCRIPTION Enhancing the existing SuperSOT range

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ZTX749 ZTX749 PNP Low Saturation Transistor • This device are designed with high current gain and low saturation voltage with collector currents up t

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A Product Line of Diodes Incorporated Green ZX5T955G 140V PNP MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 Features  BVCEO > -140V  IC = -4A Hi

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MITSUMI Low-Saturation 1000mA Regulators MM170 Low-Saturation 1000mA Regulators Monolithic IC MM170 Series Series Outline This IC is a small stabi

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FMMT620 SuperSOT™ 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A DESCRIPTION Enhancing the existing SuperSOT range

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PNP Silicon AF Transistors BCX 78 BCX 79 q q q q q High current gain Low collector-emitter saturation voltage Low noise at 1 kHz Low noise at low f

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FSB560/FSB560A July 1998 FSB560 / FSB560A C E B SuperSOT -3 (SOT-23) TM NPN Low Saturation Transistor These devices are designed with high curre

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NPN Silicon AF Transistors BC 337 BC 338 High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types

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2.0 Amp Gate Drive Optocoupler with Integrated (VCE) Desaturation Detection and Fault Status Feedback Technical Data Features • Drive IGBTs up to IC =

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FMMT620 SuperSOT™ 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY VCEO=80V; RSAT = 90m ; IC= 0.5A DESCRIPTION Enhancing the existing SuperSOT range

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FPN660/FPN660A FPN660/FPN660A PNP Low Saturation Transistor • These devices are designed for high current gain and low saturation voltage with collec

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PNP Silicon AF Transistors BCX 78 BCX 79 q q q q q High current gain Low collector-emitter saturation voltage Low noise at 1 kHz Low noise at low f

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