SC8205 Datasheet | Specifications & PDF Download

SHENZHEN FUMAN ELECTRONICS CO., LTD. 5 SC8205 (：S&CIC0706) 20V N 6 MOS 20V N-Channel Enhancement-Mode MOSFET RDS(ON), Vgs@1.8V, Ids@2.0A = 75mΩ

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SHENZHEN SIKEWEI ELECTRONICS CO., LTD. SC8205(:S&CIC0692) 20V N-Channel Enhancement-Mode MOSFET RDS(ON), Vgs@1.8V, Ids@2.0A = 75mΩ RDS(ON), Vgs@2.

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MSC8205S 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 6A RDS(ON) <37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4.

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SSC8205GSB Common Drain N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP ID 20mR@4V5 20V ±12V 22mR@3V85 6A 24mR@2V5 Advanced t

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MSC8205G 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=

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SSC8205GTA Common Drain N-Channel Enhancement Mode MOSFET  Features VDS VGS RDSon TYP ID 18mR@4V5 20V ±12V 20mR@3V85 6A 22mR@2V5 Advanced t

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