SHENZHEN FUMAN ELECTRONICS CO., LTD. 5 SC8205 (.
MSC8205G - Dual N-Channel Enhancement Mode Power MOS FET
MSC8205G 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 6A RDS(ON) < 37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=.MSC8205S - Dual N-Channel Enhancement Mode Power MOS FET
MSC8205S 20V(D-S) Dual N-Channel Enhancement Mode Power MOS FET General Features ● VDS = 20V,ID = 6A RDS(ON) <37mΩ @ VGS=2.5V RDS(ON) < 27mΩ @ VGS=4..SSC8205GTA - Common Drain N-Channel Enhancement Mode MOSFET
SSC8205GTA Common Drain N-Channel Enhancement Mode MOSFET Features VDS VGS RDSon TYP ID 18mR@4V5 20V ±12V 20mR@3V85 6A 22mR@2V5 Advanced t.SSC8205GSB - Dual N-Channel Enhancement Mode MOSFET
SSC8205GSB Common Drain N-Channel Enhancement Mode MOSFET Features VDS VGS RDSon TYP ID 20mR@4V5 20V ±12V 22mR@3V85 6A 24mR@2V5 Advanced t.SC8205 - 20V N-channel enhancement mode MOS FET
SHENZHEN FUMAN ELECTRONICS CO., LTD. 5 SC8205 (:S&CIC0706) 20V N 6 MOS 20V N-Channel Enhancement-Mode MOSFET RDS(ON), Vgs@1.8V, Ids@2.0A = 75mΩ.SC8205 - 20V N-Channel Enhancement-Mode MOSFET
SHENZHEN SIKEWEI ELECTRONICS CO., LTD. SC8205(:S&CIC0692) 20V N-Channel Enhancement-Mode MOSFET RDS(ON), Vgs@1.8V, Ids@2.0A = 75mΩ RDS(ON), Vgs@2..