SCG Datasheet | Specifications & PDF Download

BP0405SCG 40V Complementary MOSFET Description The BP0405SCG uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The co

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DMT10H009SCG 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 9.5mΩ @ VGS = 10V ID TC = +25°C 48A Description and Ap

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www.DataSheet.net/ Datasheet pdf - http://www.DataSheet4U.co.kr/ www.DataSheet.net/ Datasheet pdf - http://www.DataSheet4U.co.kr/ www.DataSheet.ne

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High Current Power Inductor CSCGX1056 Series Outline: Special materials eliminate all thermal aging issues. Flat wire coil for low losses at high freq

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High Current Power Inductor CSCGL1265 Series Outline: Flat wire winding, achieve a low D.C. Resistance. Magnetic shielded structure: excellent resista

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www.DataSheet.net/ Datasheet pdf - http://www.DataSheet4U.co.kr/ www.DataSheet.net/ Datasheet pdf - http://www.DataSheet4U.co.kr/ www.DataSheet.ne

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High Current Power Inductor CSCGX1265 Series Outline: Special materials eliminate all thermal aging issues. Flat wire coil for low losses at high freq

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MSCGLQ100X065CTYZBNMG Three-Phase Bridge, Brake, Soft Start, and Solenoid Power Module Product Overview The MSCGLQ100X065CTYZBNMG device is a three-ph

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Snap-In Aluminum Electrolytic Capacitors PEH536 Series, +105ºC Overview Applications Typical applications for KEMET's PEH536 capacitor include switc

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Elektronische Bauelemente SCG3019 N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Low

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High Current Power Inductor CSCGX1056 Series Outline: Special materials eliminate all thermal aging issues. Flat wire coil for low losses at high freq

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High Current Power Inductor CSCGX1265 Series Outline: Special materials eliminate all thermal aging issues. Flat wire coil for low losses at high freq

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High Current Power Inductor CSCGX1265 Series Outline: Special materials eliminate all thermal aging issues. Flat wire coil for low losses at high freq

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OptiMOS™3 Power-MOSFET Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Improved switching behaviour • Qualifie

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PRELIMINARY CYU01M16SCG MoBL3™ 16-Mbit (1M x 16) Pseudo Static RAM Features • Wide voltage range: 2.2V–3.6V • Access Time: 70 ns • Ultra-low active

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