SD1006 Datasheet | Specifications & PDF Download

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DATA SHEET SILICON TRANSISTOR 2SD1006, 1007 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change wi

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SMD Type NPN Silicon Epitaxial Transistor 2SD1006 Transistors Features High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta =

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LED Displays Numeric 7-segment Single Digit Display 0.3” PART NO CHIP material LSD3211-XX LSD3212-XX LSD3214-XX LSD3215-XX LSD3213-XX LSD3221-XX LSD32

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LED Displays Numeric 7-segment Single Digit Display 0.3” PART NO CHIP material LSD3211-XX LSD3212-XX LSD3214-XX LSD3215-XX LSD3213-XX LSD3221-XX LSD32

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LED Displays Numeric 7-segment Single Digit Display 0.3” PART NO CHIP material LSD3211-XX LSD3212-XX LSD3214-XX LSD3215-XX LSD3213-XX LSD3221-XX LSD32

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AiT Semiconductor Inc. www.ait-ic.com 2SD1006 GENERAL PURPOSE TRANSISTOR NPN SILICONEPITAXIAL TRANSISTORS DESCRIPTION The 2SD1006 is available in SO

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General Description The WSD1006GDN22 is the highest performance trench N-Channel MOSFET with extreme high cell density, which provide excellent RDS(ON

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SD1006 NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 DESCRIPTION: The ASI SD1006 is a High Frequency Transistor for General Purpose Ampl

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LED Displays Numeric 7-segment Single Digit Display 0.3” PART NO CHIP material LSD3211-XX LSD3212-XX LSD3214-XX LSD3215-XX LSD3213-XX LSD3221-XX LSD32

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LED Displays Numeric 7-segment Single Digit Display 0.3” PART NO CHIP material LSD3211-XX LSD3212-XX LSD3214-XX LSD3215-XX LSD3213-XX LSD3221-XX LSD32

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DATA SHEET SILICON TRANSISTOR 2SD1006, 1007 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change wi

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SD1002 THRU SD1006 1.0A Surface Mount Schottky Barrier Rectifier Voltage Range 20 to 60 Volts 450m Watts Power Dissipation Features Schottky barrier

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