SD200 Datasheet | Specifications & PDF Download

Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet htt

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www.fairchildsemi.com FSD210, FSD200 Features Green Mode Fairchild Power Switch (FPSTM) • Single Chip 700V Sense FET Power Switch • Precision Fixed

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Freescale Semiconductor Advance Information Document Number: MC06XSD200 Rev. 2.0, 9/2013 Dual 6.0 mOhm High Side Switch The 06XSD200 device is part

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Dual N-CHANNEL POWER MOSFET FEATURES ‰ Extremely Lower RDS(ON) ‰ Improved Inductive Ruggedness ‰ Fast Switching Times ‰ Rugged Polysilicon Gate Cell S

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD200 DESCRIPTION ·High Collector-Base Breakdown Voltage- : V(BR)CBO= 1500V (Min.) ·Low Col

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www.fairchildsemi.com FSD210B, FSD200B Features • Single Chip 700V Sense FET Power Switch for 7DIP • Precision Fixed Operating Frequency (134KHz) • F

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2001 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V(Min.) ·High Swi

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Freescale Semiconductor Advance Information Document Number: MC06XSD200 Rev. 2.0, 9/2013 Dual 6.0 mOhm High Side Switch The 06XSD200 device is part

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Freescale Semiconductor Advance Information Document Number: MC10XSD200 Rev. 2.0, 9/2013 Dual 10 mOhm High Side Switch The 10XSD200 device is part

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ϬϬϬ LCD MODULE SPECIFICATION MODEL NO. OSD2002BYPNJB FOR MESSRS: ________________________________________________ ON DATE OF: ________________________

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Power Transistors 2SD2000 Silicon NPN triple diffusion planar type For power switching 0.7±0.1 Unit: mm 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 φ3.1±0.1 1.

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SGSD100 SGSD200 Complementary power Darlington transistors Features ■ Complementary NPN - PNP transistors ■ Monolithic Darlington configuration Appli

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Dual N-CHANNEL POWER MOSFET FEATURES Lower RDS(ON) Improved Inductive Ruggedness Fast Switching Times Low Input Capacitance Extended Safe Op

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www.vishay.com GSD2004C-G Vishay Semiconductors Dual Common Cathode Small Signal High Voltage Switching Diode 3 1 18108_1 2 MECHANICAL DATA Case

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www.vishay.com GSD2004S-G Vishay Semiconductors Dual In-Series Small Signal High Voltage Switching Diode 3 12 MECHANICAL DATA Case: SOT-23 Weight:

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·High Speed Switching ·Good Linearity of hFE

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www.vishay.com GSD2004S Vishay Semiconductors Dual In-Series Small Signal High Voltage Switching Diode 3 12 MECHANICAL DATA Case: SOT-23 Weight: ap

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CMSD2004S SURFACE MOUNT DUAL, IN SERIES SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD2004

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