SD965 Datasheet | Specifications & PDF Download

HI-SINCERITY MICROELECTRONICS CORP. HSD965 NPN EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6537 Issued Date : 1992.11.25 Revised Date : 2004.11.30 Page

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2SD965T Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 NPN 。Silicon NPN transistor in a SOT-89 Plastic Package.  / Features ,。 Low VCE(sat)

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Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope 5.1±0.2 Unit: mm 5.0±0.2 4.0±0.2 s Featur

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www.DataSheet4U.com Mini size of Discrete semiconductor elements Diode Rectifier Schottky SOD-723 / SOD-523 / SOD-323 TO-252 / TO263 SOT-23-6 / TSSOP

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ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups

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Elektronische Bauelemente 2SD965A 5A, 40V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free

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REPLACEMENT TYPE : 2SD965A HED965A(NPN) GENERAL PURPOSE TRANSISTOR FEATURES  Low Collector-Emitter Saturation Voltage  Large Collector Power Dissi

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GST2SD965 NPN General Purpose Transistor Product Description This device is designed as a general purpose amplifier and switch. Features „ Collector

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www.DataSheet4U.com CORPORATION GSD965AA Description Package Dimensions D E S1 ISSUED DATE :2005/02/17 REVISED DATE : NPN EPITAXIAL PLANAR TRANSIST

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SMD Type Silicon NPN epitaxial planar type 2SD965 Transistors IC www.DataSheet4U.com Features Low collector-emitter saturation voltage VCE(sat) Sat

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ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups

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UNISONIC TECHNOLOGIES CO., LTD 2SD965/A LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES * Collector current up to 5A * UTC 2SD965: Collector-Emitter volt

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UTC 2SD965B LOW VOLTAGE HIGH CURRENT NPN TRANSISTOR FEATURES * Collector current up to 5A * 2SD965B : Collector-Emitter voltage up to 30 V NPN EPITAX

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Transistor 2SD965 Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope s Features q Low collector to emitter satura

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www.DataSheet4U.com CORPORATION GSD965A Description Package Dimensions D E S1 ISSUED DATE :2005/02/04 REVISED DATE : NP N E PITAX I AL P L ANAR T R

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors www.datasheet4u.com SOT-89 TRANSISTOR (NPN) 1. BASE 2SD96

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DC COMPONENTS CO., LTD. R 2SD965 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use

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Production specification LOW VOLTAGE HIGH CURRENT TRANSISTOR FEATURES  Collector current up to 5A  Collector-Emitter voltage up to 30V Pb Lead-fr

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www.DataSheet4U.com CORPORATION GSD965 Description NPN EPITAXIAL PLANAR T RANSISTOR ISSUED DATE :2004/04/05 REVISED DATE :2004/11/29B The GSD965 is

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SMD Type NPN Transistors 2SD965A Transistors ■ Features ● Audio amplifier ● Flash unit of camera ● Switching circuit 1.70 0.1 0.42 0.1 0.46 0.1

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