* q q s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (Ta=25˚C) Ratings 40 20 7 8
2SD965
Panasonic Semiconductor
39.30 KB
Silicon npn transistor.
Transistor
2SD965
Silicon NPN epitaxial planer type
For low-frequency power amplification For stroboscope
5.1±0.2
Unit: mm
5.0±0.2 4.0±0.2
s Featur.
📁 Related Datasheet
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: .
2SD961 - Power Transistor
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isc Silicon NPN Power Transistor
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2SD962 - NPN Transistor
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isc Silicon NPN Darlington Power Transistor
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2SD965 - Transistor
(GME)
Production specification
LOW VOLTAGE HIGH CURRENT TRANSISTOR
FEATURES
z Collector current up to 5A z Collector-Emitter voltage up to 20V
Pb
Lead-fr.
2SD965 - Transistor
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 2SD965/A
LOW VOLTAGE HIGH CURRENT TRANSISTOR
FEATURES
* Collector current up to 5A * UTC 2SD965: Collector-Emitter volt.
2SD965 - Silicon NPN Transistor
(Panasonic)
Transistor
2SD965
Silicon NPN epitaxial planer type
For low-frequency power amplification For stroboscope
s Features
q Low collector to emitter satura.
2SD965 - Silicon NPN Transistor
(Guangdong Kexin Industrial)
SMD Type
Silicon NPN epitaxial planar type 2SD965
Transistors IC
..
Features
Low collector-emitter saturation voltage VCE(sat) Sat.
2SD965 - NPN Transistor
(Dc Components)
DC COMPONENTS CO., LTD.
R
2SD965
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use .
