2SD961 Datasheet, Transistor, Inchange Semiconductor

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2SD961

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Inchange Semiconductor

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📄 Datasheet

Description:

Power transistor.

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min)

Good Linearity of hFE

Low Collector Saturation V

2SD961 Application

• Applications
• Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-

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2SD961

Inchange Semiconductor

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