2SD961 - Power Transistor
*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *Good Linearity of hFE *Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 4A *Complement to Type 2SB869 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Design
