2SD961 Datasheet - Inchange Semiconductor

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2SD961 Power Transistor

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Good Linearity of hFE. Low Collector Saturation Voltage : VCE(sat)= 0.

2SD961_InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD961

Manufacturer:

Inchange Semiconductor

File Size:

214.52 KB

Description:

Power Transistor

Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC

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2SD961 Power Transistor Inchange Semiconductor

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