2SD961 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Good Linearity of hFE. Low Collector Saturation Voltage : VCE(sat)= 0.

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Datasheet Specifications

Part number: 2SD961
Manufacturer: Inchange Semiconductor
File Size: 214.52 KB
Datasheet: 2SD961_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC

2SD961 Distributors

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Power Transistor Inchange Semiconductor

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