Datasheet4U Logo Datasheet4U.com

2SD961 Datasheet - Inchange Semiconductor

2SD961 Power Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *Good Linearity of hFE *Low Collector Saturation Voltage : VCE(sat)= 0.5V(Max)@IC= 4A *Complement to Type 2SB869 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Design.

2SD961_InchangeSemiconductor.pdf

Preview of 2SD961 PDF
2SD961 Datasheet Preview Page 2

Datasheet Details

Part number:

2SD961

Manufacturer:

Inchange Semiconductor

File Size:

214.52 KB

Description:

Power transistor.

📁 Related Datasheet

2SD960 Silicon NPN Transistor (Inchange Semiconductor)

2SD962 NPN Transistor (INCHANGE)

2SD965 Silicon NPN Transistor (Panasonic Semiconductor)

2SD965 Transistor (GME)

2SD965 Transistor (UTC)

2SD965 Silicon NPN Transistor (Panasonic)

2SD965 Silicon NPN Transistor (Guangdong Kexin Industrial)

2SD965 NPN Transistor (Dc Components)

TAGS

2SD961 2SD961 Power Transistor Inchange Semiconductor

2SD961 Distributor