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2SD960 Datasheet - Inchange Semiconductor

2SD960 Silicon NPN Transistor

*Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) *Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.5V(Max) @IC= 3A *Complement to Type 2SB868 *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for power swit.

2SD960-InchangeSemiconductor.pdf

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Datasheet Details

Part number:

2SD960

Manufacturer:

Inchange Semiconductor

File Size:

214.21 KB

Description:

Silicon npn transistor.

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2SD960 2SD960 Silicon NPN Transistor Inchange Semiconductor

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