2SD960 Silicon NPN Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0. Compl.

📥 Download Datasheet

2SD960 Datasheet Preview — Preview of 2SD960 PDF

Datasheet Specifications

Part number: 2SD960
Manufacturer: Inchange Semiconductor
File Size: 214.21 KB
Datasheet: 2SD960-InchangeSemiconductor.pdf
Description: Silicon NPN Transistor

Applications

* Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 130 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak PC

2SD960 Distributors

📁 Related Datasheet

2SD962 2SD965 2SD965-Q 2SD965A 2SD965A-HF 2SD965B

📌 All Tags

2SD960 Silicon NPN Transistor Inchange Semiconductor

Inchange Semiconductor 2SD960-like datasheet