Part number:
2SD962
Manufacturer:
INCHANGE
File Size:
194.86 KB
Description:
Npn transistor.
2SD962
INCHANGE
194.86 KB
Npn transistor.
📁 Related Datasheet
2SD960 - Silicon NPN Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Low Collector-Emitter Saturation Voltage-
: .
2SD961 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturat.
2SD965 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD965
Silicon NPN epitaxial planer type
For low-frequency power amplification For stroboscope
5.1±0.2
Unit: mm
5.0±0.2 4.0±0.2
s Featur.
2SD965 - Transistor
(GME)
Production specification
LOW VOLTAGE HIGH CURRENT TRANSISTOR
FEATURES
z Collector current up to 5A z Collector-Emitter voltage up to 20V
Pb
Lead-fr.
2SD965 - Transistor
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 2SD965/A
LOW VOLTAGE HIGH CURRENT TRANSISTOR
FEATURES
* Collector current up to 5A * UTC 2SD965: Collector-Emitter volt.
2SD965 - Silicon NPN Transistor
(Panasonic)
Transistor
2SD965
Silicon NPN epitaxial planer type
For low-frequency power amplification For stroboscope
s Features
q Low collector to emitter satura.
2SD965 - Silicon NPN Transistor
(Guangdong Kexin Industrial)
SMD Type
Silicon NPN epitaxial planar type 2SD965
Transistors IC
..
Features
Low collector-emitter saturation voltage VCE(sat) Sat.
2SD965 - NPN Transistor
(Dc Components)
DC COMPONENTS CO., LTD.
R
2SD965
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use .
