2SD962 NPN Transistor

INCHANGE

Description

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor 2SD962 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO = 200V(Min). High DC Current Gain. High Reliability. Good Linearity of hFE.

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Datasheet Specifications

Part number: 2SD962
Manufacturer: INCHANGE
File Size: 194.86 KB
Datasheet: 2SD962-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for series regulators ,color TV, power supplies and similar devices applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Cont

2SD962 Distributors

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2SD962 NPN Transistor INCHANGE

INCHANGE 2SD962-like datasheet