* q q 2.6±0.1 4.5±0.1 1.6±0.2 1.5±0.1 0.4max. 45° s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB789 2SB789A 2SB789 VCBO VCEO VEBO ICP IC PC
* Tj Tstg Symbol (Ta=25˚C) 1.0
* 0.2 +0.1 Ratings
* 100
* 120
* 100
* 120
* 5
2SD968A
Panasonic Semiconductor
38.50 KB
Silicon pnp epitaxial planer type transistor.
Transistor
2SB789, 2SB789A
Silicon PNP epitaxial planer type
For low-frequency driver amplification Complementary to 2SD968 and 2SD968A
Unit: mm
s F.
📁 Related Datasheet
2SD968 - Silicon NPN epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SD968, 2SD968A
Silicon NPN epitaxial planer type
For low-frequency driver amplification Complementary to 2SB789 and 2SB789A
Unit: mm
s F.
2SD968 - Silicon PNP epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SD968, 2SD968A
Silicon NPN epitaxial planer type
For low-frequency driver amplification Complementary to 2SB789 and 2SB789A
Unit: mm
s F.
2SD968 - Silicon NPN Transistor
(Kexin)
SMD Type
Silicon NPN epitaxial planer type 2SD968, 2SD968A
Transistors
Features
High collector to emitter voltage VCEO. Large collector power dissip.
2SD968A - Silicon NPN epitaxial planer type Transistor
(Panasonic Semiconductor)
Transistor
2SB789, 2SB789A
Silicon PNP epitaxial planer type
For low-frequency driver amplification Complementary to 2SD968 and 2SD968A
Unit: mm
s F.
2SD968A - Silicon NPN Transistor
(Panasonic Semiconductor)
..net
Transistors
2SD0968A (2SD968A)
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency driver amplification Complementary .
2SD968A - Silicon NPN Transistor
(Kexin)
SMD Type
Silicon NPN epitaxial planer type 2SD968, 2SD968A
Transistors
Features
High collector to emitter voltage VCEO. Large collector power dissip.
2SD960 - Silicon NPN Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Low Collector-Emitter Saturation Voltage-
: .
2SD961 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturat.
