2SD965
Panasonic
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Silicon npn transistor.
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2SD960 - Silicon NPN Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Low Collector-Emitter Saturation Voltage-
: .
2SD961 - Power Transistor
(Inchange Semiconductor)
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Low Collector Saturat.
2SD962 - NPN Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD962
DESCRIPTION ·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 200V(.
2SD965 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD965
Silicon NPN epitaxial planer type
For low-frequency power amplification For stroboscope
5.1±0.2
Unit: mm
5.0±0.2 4.0±0.2
s Featur.
2SD965 - Transistor
(GME)
Production specification
LOW VOLTAGE HIGH CURRENT TRANSISTOR
FEATURES
z Collector current up to 5A z Collector-Emitter voltage up to 20V
Pb
Lead-fr.
2SD965 - Transistor
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 2SD965/A
LOW VOLTAGE HIGH CURRENT TRANSISTOR
FEATURES
* Collector current up to 5A * UTC 2SD965: Collector-Emitter volt.
2SD965 - Silicon NPN Transistor
(Guangdong Kexin Industrial)
SMD Type
Silicon NPN epitaxial planar type 2SD965
Transistors IC
..
Features
Low collector-emitter saturation voltage VCE(sat) Sat.
2SD965 - NPN Transistor
(Dc Components)
DC COMPONENTS CO., LTD.
R
2SD965
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use .
2SD965 - NPN Silicon Transistor
(SEMTECH)
ST 2SD965
NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups.
2SD965 - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
2SD965
Rev.E Mar.-2016
DATA SHEET
/ Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package.
/ Features ,。 Low VCE(sat),high.
