2SD2065 Datasheet - Panasonic

2SD2065 Silicon NPN Transistor

Power Transistors 2SD2065 www.DataSheet4U.com Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1372 Unit: mm q q q q q 16.2±0.5 12.5 3.5 Solder Dip Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 140 140.

2SD2065 Features

* 15.0±0.3 11.0±0.2 5.0±0.2 3.2 21.0±0.5 15.0±0.2 φ3.2±0.1 2.0±0.2 2.0±0.1 0.6±0.2 1.1±0.1 5.45±0.3 10.9±0.5 1 2 3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°

2SD2065_Panasonic.pdf