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2SD2062 - NPN Transistor

2SD2062 Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2062 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Good Linearity of hFE. 100% avalanche tested. Minimum Lot-to-Lot variation.

2SD2062 Applications

* Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A IB Base Current-Continu

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Datasheet Details

Part number
2SD2062
Manufacturer
INCHANGE
File Size
178.67 KB
Datasheet
2SD2062-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD2062-like datasheet