2SD2062 Datasheet - INCHANGE

2SD2062, NPN Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2062 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Good Linearity of hFE. 100% avalanche tested. Minimum Lot-to-Lot variation.

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2SD2062-INCHANGE.pdf

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Datasheet Details

Part number:

2SD2062

Manufacturer:

INCHANGE

File Size:

178.67 KB

Description:

NPN Transistor

Applications

* Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A IB Base Current-Continu

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2SD2062 NPN Transistor INCHANGE

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