2SD2060 Datasheet - INCHANGE

2SD2060, NPN Transistor

isc Silicon NPN Power Transistor 2SD2060 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Collector Power Dissipation- : PC= 25W@ TC= 25℃. Low Collector Saturation Volt.

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2SD2060-INCHANGE.pdf

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Datasheet Details

Part number:

2SD2060

Manufacturer:

INCHANGE

File Size:

195.40 KB

Description:

NPN Transistor

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC C

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2SD2060 NPN Transistor INCHANGE

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