2SD2060 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor 2SD2060 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Collector Power Dissipation- : PC= 25W@ TC= 25℃. Low Collector Saturation Volt.

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Datasheet Specifications

Part number: 2SD2060
Manufacturer: INCHANGE
File Size: 195.40 KB
Datasheet: 2SD2060-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC C

2SD2060 Distributors

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2SD2060 NPN Transistor INCHANGE

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