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2SD2060 - NPN Transistor

2SD2060 Description

isc Silicon NPN Power Transistor 2SD2060 .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Collector Power Dissipation- : PC= 25W@ TC= 25℃. Low Collector Saturation Volt.

2SD2060 Applications

* Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous PC C

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Datasheet Details

Part number
2SD2060
Manufacturer
INCHANGE
File Size
195.40 KB
Datasheet
2SD2060-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SD2060-like datasheet