2SD2067 Datasheet (Panasonic Semiconductor)

2SD2067, Silicon NPN Transistor

Transistor 2SD2067 (Tentative) Silicon NPN epitaxial planer type 6.9±0.1 1.05 2.5±0.1 ±0.05 Unit: mm (1.45) 0.8 0.5 4.5±0.1 For low-frequency output amplification 0.15 0.7 4.0 q q q q q Darlington connection.

High foward current transfer ratio hFE.

Large peak collector current ICP.

High collector to emitter voltage VCEO.

Allowing supply with the radial taping.

0.45 0.05 0.45 0.05 +0.1 +0.1 2.5±0.5 1 2 2.5±0.5 3 s Absolute Maximum Ratings Parameter Collector to base

2SD2067 Features

* 0.65 max. 1.0 1.0 0.2 Unit µA µA V V V VCE(sat) VBE(sat) V V Rank classification Q R S 4000 ~ 10000 8000 ~ 20000 16000 ~ 40000 Pulse measurement Rank hFE 1 Transistor PC

* Ta 1.2 3.0 Printed circut board: Copper foil area of 1cm2 or more, and the board thickness of 1.7mm for the c