2SD2066 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD2066 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 160V(Min). Good Linearity of hFE. High transition frequency(fT). Wide area of s.

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Datasheet Specifications

Part number: 2SD2066
Manufacturer: INCHANGE
File Size: 195.82 KB
Datasheet: 2SD2066-INCHANGE.pdf
Description: NPN Transistor

Applications

* Designed for high power amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 12 A ICM C

2SD2066 Distributors

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2SD2066 NPN Transistor INCHANGE

INCHANGE 2SD2066-like datasheet