* Audio amplifier Flasg unit of camera Switching circuit CLASSIFICATION OF hFE(2) Rank Q Range 230 - 380 R 340 - 600 S 560 - 800 SOT-89 B 1 C2 E3 A EC 4 BD FG H J K L REF. A B C D E F Millimeter Min. Max. 4.40 3.94 4.60 4.25 1.40 1.60 2.30 2.60 1.50 1.70 0.89 1.20 REF. G H J
2SD965A
SeCoS
96.63 KB
Npn transistor.
Elektronische Bauelemente
2SD965A
5A, 40V NPN Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
.
📁 Related Datasheet
2SD965 - Silicon NPN Transistor
(Panasonic Semiconductor)
Transistor
2SD965
Silicon NPN epitaxial planer type
For low-frequency power amplification For stroboscope
5.1±0.2
Unit: mm
5.0±0.2 4.0±0.2
s Featur.
2SD965 - Transistor
(GME)
Production specification
LOW VOLTAGE HIGH CURRENT TRANSISTOR
FEATURES
z Collector current up to 5A z Collector-Emitter voltage up to 20V
Pb
Lead-fr.
2SD965 - Transistor
(UTC)
UNISONIC TECHNOLOGIES CO., LTD 2SD965/A
LOW VOLTAGE HIGH CURRENT TRANSISTOR
FEATURES
* Collector current up to 5A * UTC 2SD965: Collector-Emitter volt.
2SD965 - Silicon NPN Transistor
(Panasonic)
Transistor
2SD965
Silicon NPN epitaxial planer type
For low-frequency power amplification For stroboscope
s Features
q Low collector to emitter satura.
2SD965 - Silicon NPN Transistor
(Guangdong Kexin Industrial)
SMD Type
Silicon NPN epitaxial planar type 2SD965
Transistors IC
..
Features
Low collector-emitter saturation voltage VCE(sat) Sat.
2SD965 - NPN Transistor
(Dc Components)
DC COMPONENTS CO., LTD.
R
2SD965
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use .
2SD965 - NPN Silicon Transistor
(SEMTECH)
ST 2SD965
NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups.
2SD965 - Silicon NPN transistor
(BLUE ROCKET ELECTRONICS)
2SD965
Rev.E Mar.-2016
DATA SHEET
/ Descriptions TO-92 NPN 。Silicon NPN transistor in a TO-92 Plastic Package.
/ Features ,。 Low VCE(sat),high.
