SH-1 Datasheet | Specifications & PDF Download

3.7A, 20V N 　N 　N-Channel Enhancement Mode Field Effect Transistor SMD 　　Features 　■20V, 3.7A, RDS(ON)=50mΩ @ VGS=4.5V 　■High dense cell design fo

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate char

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PC817XNNSZ0F Series DIP 4pin Photocoupler PC817XNNSZ0F ■Description PC817XNNSZ0F Series contains an IRED optically coupled to a phototransistor. It

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74HC595 8−Bit Serial−Input/Serial or Parallel−Output Shift Register with Latched 3−State Outputs High−Performance Silicon−Gate CMOS The 74HC595 consi

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M74HC595 8-bit shift register with output latches (3-state) SO16 TSSOP16 Features • High speed: fMAX = 59 MHz (typ.) at VCC = 6 V • Low power diss

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74HC595; 74HCT595 8-bit serial-in, serial or parallel-out shift register with output latches; 3-state Rev. 12 — 20 March 2024 Product data sheet

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Confidential CECT rum SC6531E and SC6531M DeFvoirce Specification Confidential Spreadtrum CECT For Confidentiwalww.spreadtrum.com Spreadtrum C

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74HC595 8-BIT SHIFT REGISTER WITH 8-BIT OUTPUT REGISTER Description The 74HC595 is an high speed CMOS device. An eight bit shift register accpets dat

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PIC16F87X 28/40-Pin 8-Bit CMOS FLASH Microcontrollers Devices Included in this Data Sheet: • PIC16F873 • PIC16F874 • PIC16F876 • PIC16F877 Microco

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HD74HC595 8-bit Shift Register/Latch (with 3-state outputs) Description This device each contains an 8-bit serial-in, parallel-out shift register tha

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HM2301B P-Channel Enhancement Mode Power MOSFET Description The HM2301B uses advanced trench technology to provide excellent RDS(ON), low gate charge

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< DIPIPM > SLIMDIP-S TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  RC-IGBT inverter bridge for three phase DC-to-AC power

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PIC16F87/88 Data Sheet 18/20-Pin Enhanced FLASH Microcontrollers with nanoWatt Technology  2002 Microchip Technology Inc. Advance Information DS30

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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THGBMDG5D1LBAIL 4GB THGBMDG5D1LBAIL TOSHIBA e-MMC Module INTRODUCTION THGBMDG5D1LBAIL is 4GB density of e-MMC Module product housed in 153 ball BG

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PIC16F87XA 28/40/44-Pin Enhanced Flash Microcontrollers Devices Included in this Data Sheet: • PIC16F873A • PIC16F874A • PIC16F876A • PIC16F877A H

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PIC16F870/871 Data Sheet 28/40-Pin, 8-Bit CMOS FLASH Microcontrollers  2003 Microchip Technology Inc. DS30569B Note the following details of the c

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www.DataSheet4U.com SH69P25 PRELIMINARY Features „ „ „ „ „ „ „ „ „ „ SH6610C-based single-chip 4-bit micro-controller OTPROM: 4096 X 16 bits RAM: 160

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RS-445PA/PD OUTPUT : 3.0W~55W (APPROX) Typical Applications Office Automation Equipment : Printer Carbon-brush motors WEIGHT : 127g (APPROX) VOLTAGE

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