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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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74HC595 8-BIT SHIFT REGISTER WITH 8-BIT OUTPUT REGISTER Description The 74HC595 is an high speed CMOS device. An eight bit shift register accpets dat

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74HC595 8−Bit Serial−Input/Serial or Parallel−Output Shift Register with Latched 3−State Outputs High−Performance Silicon−Gate CMOS The 74HC595 consi

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4207 Audio Frequency General Purpose Amplifier Applications 2SC4207 Unit: mm  Small

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54LS194A DM74LS194A 4-Bit Bidirectional Universal Shift Register June 1989 54LS194A DM74LS194A 4-Bit Bidirectional Universal Shift Register General

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www.DataSheet4U.com FLANGED BUSHINGS NAS77 UNLINED FLANGED BUSHINGS • Material options: Aluminum bronze, beryllium copper, alloy steel, CRES • Finis

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383 Color TV Vertical Deflection Output Applications Color TV Class-B Sound Output App

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Solar LED Driver YX8018 Japanese PDF to Engli sh P DF by Jonovid 2016 Features: high efficiency: 80-90% less parts: inductor 1 only by low-voltage b

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HD74HC595 8-bit Shift Register/Latch (with 3-state outputs) Description This device each contains an 8-bit serial-in, parallel-out shift register tha

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SJ73Lxxx Standard Voltage Detector Description • The SJ73Lxxx prevents the error of system from supply voltage below normal voltage level at the tim

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Appl

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< DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  RC-IGBT inverter bridge for three phase DC-to-AC power

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< DIPIPM > SLIMDIP-S TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  RC-IGBT inverter bridge for three phase DC-to-AC power

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S4VB60 Bridge Diodes 600V, 4A Feature ・Input/Outout In-line ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): S4VB Equivalent circuit Absol

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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Bi-CMOS Linear Integrated Circuit Silicon Monolithic TB2929AHQ(Tentative) Maximum Power 47W BTL × 4-ch Audio Power IC TB2929AHQ 1. Description The T

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2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) 2SK3878 Switching Regulator Applications • Low drain-source ON-resistan

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TB2929HQ TOSHIBA Bi-CMOS Linear Integrated Circuit Silicon Monolithic TB2929HQ 45W × 4-ch BTL Audio Power IC The TB2929HQ is a four-channel BTL power

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