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74HC595 8−Bit Serial−Input/Serial or Parallel−Output Shift Register with Latched 3−State Outputs High−Performance Silicon−Gate CMOS The 74HC595 consi

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2SK3878 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π- MOSIV) 2SK3878 Switching Regulator Applications • Low drain-source ON-resistan

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383 Color TV Vertical Deflection Output Applications Color TV Class-B Sound Output App

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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SJ73Lxxx Standard Voltage Detector Description • The SJ73Lxxx prevents the error of system from supply voltage below normal voltage level at the tim

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TB2929HQ TOSHIBA Bi-CMOS Linear Integrated Circuit Silicon Monolithic TB2929HQ 45W × 4-ch BTL Audio Power IC The TB2929HQ is a four-channel BTL power

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Solar LED Driver YX8018 Japanese PDF to Engli sh P DF by Jonovid 2016 Features: high efficiency: 80-90% less parts: inductor 1 only by low-voltage b

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www.DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataSheet4U.com

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Appl

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< DIPIPM > SLIMDIP-L TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  RC-IGBT inverter bridge for three phase DC-to-AC power

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S4VB60 Bridge Diodes 600V, 4A Feature ・Input/Outout In-line ・Pb free terminal ・RoHS:Yes OUTLINE Package (House Name): S4VB Equivalent circuit Absol

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1013 Color TV Verttical Deflection Output Applications Power Switching Applications 2S

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications 2SC5198 Unit: mm • High breakdown voltage: VCEO = 140 V (mi

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Discrete IGBTs Silicon N-Channel IGBT GT50JR22 GT50JR22 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications Note: The pr

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Bi-CMOS Linear Integrated Circuit Silicon Monolithic TB2929AHQ(Tentative) Maximum Power 47W BTL × 4-ch Audio Power IC TB2929AHQ 1. Description The T

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TLP785,TLP785F TOSHIBA Photocoupler IRED & Photo−Transistor TLP785, TLP785F Office Equipment Home Electric Appliances Solid-State Relays Switching Po

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9014 NPN SILICON TRANSISTOR TO 92 FEATURES Power dissipation PCM : 0.4 W Tamb=25 Collector current A ICM : 0.1 Collector-base voltage V V(BR)CBO :

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< DIPIPM > SLIMDIP-S TRANSFER MOLDING TYPE INSULATED TYPE OUTLINE MAIN FUNCTION AND RATINGS  RC-IGBT inverter bridge for three phase DC-to-AC power

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MOSFETs Silicon N-Channel MOS (DTMOS) TK16A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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