SI Semiconductors Datasheet | Specifications & PDF Download

1N4448 High-reliability discrete products and engineering services since 1977 SILICON SWITCHING DIODE FEATURES • Available as “HR” (high reliabilit

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SC6105 VOLTAGE MODE PWM POWER SUPPLY WITH BUILT-IN SUPERVISOR, PROTECTION AND REGULATION DESCRIPTION The SC6105 is a switching mode power supply con

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D3SBA10 ~ D3SBA80 PRV : 100 ~ 800 Volts Io : 4.0 Amperes FEATURES : * High current www.DataSheet4U.com * * * * * * * capability High surge current cap

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SEMICONDUCTORS BU806 SILICON DARLINGTON POWER TRANSISTORS They are silicon epitaxial planar NPN power transistors in Darlington configuration mounte

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WL005 - WL10 PRV : 50 - 1000 Volts Io : 1.0 Ampere SILICON BRIDGE RECTIFIERS WOB 0.39 (10.0) 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : * * * *

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830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes

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1N6267 - 1N6303A VBR : 6.8 - 200 Volts PPK : 1500 Watts FEATURES : * 1500W surge capability at 1ms * Excellent clamping capability * Low zener impedan

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1N6461-1N6468 1N6469-1N6476 High-reliability discrete products and engineering services since 1977 TRANSIENT VOLTAGE SUPPRESSORS FEATURES:  Availa

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1N4148.1N4448 Silicon Epitaxial Planar Diodes Features D Electrically equivalent diodes: 1N4148 – 1N914 1N4448 – 1N914B Applications Extreme fast sw

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SOT89 NPN SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - DECEMBER 1998 FEATURES FCX1051A C * * * * * 2W POWER DISSIPATION 10A Peak Pulse Current E

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SOT89 PNP SILICON POWER (SWITCHING) TRANSISTOR ISSSUE 1 - SEPTEMBER 1999 FEATURES FCX1149A C * * * * * 2W POWER DISSIPATION 20A Peak Pulse Current

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SOT89 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR ISSUE 3 - OCTOBER 1995 PARTMARKING DETAIL – P89 7 FCX589 C E C ABSOLUTE MAXIMUM RA

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SOT23 SILICON PLANAR VOLTAGE REGULATOR DIODES ISSUE 3 - NOVEMBER 1995 PIN CONFIGURATION 7 BZX84 SERIES C2V7 to C47 1 3 2 SOT23 ABSOLUTE MAXIM

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SM-8 BIPOLAR TRANSISTOR H-BRIDGE ZHB6792 PRELIMINARY DATA SHEET ISSUE A MAY 1998 FEATURES * Compact package * Low on state losses * Low drive require

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SOT23 SILICON HIGH CURRENT SCHOTTKY BARRIER DIODE “SuperBAT” ISSUE 1- September 1997 FEATURES: • Low V F • High Current Capability APPLICATIONS: • DC

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QIS0660001 Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272 Single IGBT H-Series Hermetic Module 600 Amperes/600 Volts Description: P

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NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTORS ISSUE 2 – JULY 94 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt ZTX656

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