SI-3090 Datasheet | Specifications & PDF Download

® ISL3090 Data Sheet June 2003 FN8045.1 www.DataSheet4U.com 10GHz VCO The ISL3090 is a 10GHz SiGe monolithic VCO circuit designed to simplify and r

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.HIGH SPEED NPN POWER TRANSISTORS MJH13090 MJH13091 400 & 450 VOLTS 15 AMPS, 125 WATTS The MJH13090 and MJH13091 transistors are designed for high-v

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Description PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused reachthrough structure.

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isc Silicon NPN Power Transistors DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)—MJH13090 = 450V(Min)—MJH13091 ·High Swi

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isc Silicon NPN Power Transistors MJ13090/13091 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)—MJ13090 = 450V(Min)—MJ13

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CMPT3090L SURFACE MOUNT LOW VCE(SAT) NPN POWER TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT3090L is a Low

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Freescale Semiconductor Technical Data Document Number: MRF6V3090N www.DataSheet4U.com Rev. 0, 4/2010 RF Power Field Effect Transistors N--Channel

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www.DataSheet.co.kr CXT3090L SURFACE MOUNT LOW VCE(SAT) NPN SILICON POWER TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL S

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qSI-3000J Series SI-3000J Series 5-Terminal, Multi-Function, Full-Mold, Low Dropout Voltage Dropper Type sFeatures • • • • • Compact full-mold packa

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Description PerkinElmer Type C30902E avalanche photodiode utilizes a silicon detector chip fabricated with a double-diffused reachthrough structure.

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DATASHEET SENSOR SOLUTIONS Silicon Avalanche Photodiodes C30902 Series High Speed APDs for Analytical and Biomedical Lowest Light Detection Applicati

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors 2SC3090 DESCRIPTION ·With TO-3PN package ·High brea

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