SI2312 Datasheet | Specifications & PDF Download

Si2312 N-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive req

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N-Channel 20 V (D-S) MOSFET Si2312BDS Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) 0.031 at VGS = 4.5 V 0.037 at VGS = 2.5 V 0.047 at V

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SI2312 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 N MOS 。N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features 。 Trench FET Power MO

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SI2312CDS-T1-GE3 N-Channel 20 V (D-S) MOSFET www.VBsemi.tw PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.028 at VGS = 4.5 V 20 0.042 at VGS = 2.5 V 0.

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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New Product Si2312CDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.0318 at VGS = 4.5 V 20 0.0356 at VGS = 2.5

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Features • High Power and Current Handing Capability • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free. “Green

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20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A < 31mΩ RDS(ON), Vgs@2.5V, Ids@4.5A < 37mΩ RDS(ON), Vgs@1.8V, Ids@3.9A < 85m

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N-Channel 20 -V (D-S) MOSFET Si2312DS Vishay Siliconix PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) 0.033 @ VGS = 4.5 V 0.040 @ VGS = 2.5 V 0.051 @ VGS

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