SI2318 Datasheet | Specifications & PDF Download

New Product Si2318CDS Vishay Siliconix N-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 40 RDS(on) () 0.042 at VGS = 10 V 0.051 at VGS = 4.5 V

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UMW R UMW SI2318A SOT-23-3L Plastic-Encapsulate MOSFETS ■ Features ● VDS (V) = 40V ● ID = 5.6 A (VGS = 10V) ● RDS(ON) ＜ 42mΩ (VGS = 10V) ● RDS(ON) ＜

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Plastic-Encapsulate Mosfets PRODUCT SUMMARY VDS (V) RDS(on) () 0.042 at VGS = 10 V 40 0.051 at VGS = 4.5 V ID (A)a 5.6 5.1 Qg (Typ.) 2.9 nC AP

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N-Channel 40-V (D-S) MOSFET Si2318DS Vishay Siliconix PRODUCT SUMMARY VDS (V) 40 RDS(on) (Ω) 0.045 at VGS = 10 V 0.058 at VGS = 4.5 V ID (A) 3.9

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SI2318CDS-T1-GE3 www.VBsemi.com SI2318CDS-T1-GE3 N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 10 V 30 0.033 at

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SI2318DS-T1-GE3 SI2318DS-T1-GE3 Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 10 V 30 0

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Features • Trench Power LV MOSFET Technology • High Power and Current Handing Capability • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensit

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