Datasheet Specifications
- Part number
- SI2318DS-T1-GE3
- Manufacturer
- VBsemi
- File Size
- 310.97 KB
- Datasheet
- SI2318DS-T1-GE3-VBsemi.pdf
- Description
- N-Channel MOSFET
Description
SI2318DS-T1-GE3 SI2318DS-T1-GE3 Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 10 V 30 0.
Features
* Halogen-free According to IEC 61249-2-21 DefinitionApplications
* DC/DC Converter D G1 3D G S2 Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC = 25 °C 6.5a Continuous Drain Current (TJ = 150 °C) TC = 70 °CSI2318DS-T1-GE3 Distributors
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