SI2318DS-T1-GE3 Datasheet - VBsemi

SI2318DS-T1-GE3, N-Channel MOSFET

SI2318DS-T1-GE3 SI2318DS-T1-GE3 Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 10 V 30 0.

datasheet Preview Page 1 from Datasheet4u.com

SI2318DS-T1-GE3-VBsemi.pdf

SI2318DS-T1-GE3 Datasheet Preview — Preview of SI2318DS-T1-GE3 PDF

Datasheet Details

Part number:

SI2318DS-T1-GE3

Manufacturer:

VBsemi

File Size:

310.97 KB

Description:

N-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested

Applications

* DC/DC Converter D G1 3D G S2 Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC = 25 °C 6.5a Continuous Drain Current (TJ = 150 °C) TC = 70 °C

SI2318DS-T1-GE3 Distributors

📁 Related Datasheet

Si2318DS SI2318 SI2318A SI2318CDS SI2310 SI2311DS

📌 All Tags

SI2318DS-T1-GE3 N-Channel MOSFET VBsemi

VBsemi SI2318DS-T1-GE3-like datasheet