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SI2318DS-T1-GE3 - N-Channel MOSFET

SI2318DS-T1-GE3 Description

SI2318DS-T1-GE3 SI2318DS-T1-GE3 Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 10 V 30 0.

SI2318DS-T1-GE3 Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested

SI2318DS-T1-GE3 Applications

* DC/DC Converter D G1 3D G S2 Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC = 25 °C 6.5a Continuous Drain Current (TJ = 150 °C) TC = 70 °C

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Datasheet Details

Part number
SI2318DS-T1-GE3
Manufacturer
VBsemi
File Size
310.97 KB
Datasheet
SI2318DS-T1-GE3-VBsemi.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET VBsemi
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