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SI2318CDS-T1-GE3 - N-Channel MOSFET

SI2318CDS-T1-GE3 Description

SI2318CDS-T1-GE3 www.VBsemi.com SI2318CDS-T1-GE3 N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 10 V 30 0.033 at.

SI2318CDS-T1-GE3 Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested

SI2318CDS-T1-GE3 Applications

* DC/DC Converter D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Dra

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Datasheet Details

Part number
SI2318CDS-T1-GE3
Manufacturer
VBsemi
File Size
308.97 KB
Datasheet
SI2318CDS-T1-GE3-VBsemi.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET VBsemi
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