Part number:
SI2318CDS-T1-GE3
Manufacturer:
VBsemi
File Size:
308.97kb
Download:
Description:
N-channel mosfet.
PDF File Details
SI2318CDS-T1-GE3
VBsemi
308.97kb
N-channel mosfet.
📁 Related Datasheet
SFI0402ML050C - N-Channel 40 V (D-S) MOSFET
(Vishay)
New Product
Si2318CDS
Vishay Siliconix
N-Channel 40 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 40 RDS(on) () 0.042 at VGS = 10 V 0.051 at VGS = 4.5 V .
SI2318 - N-Channel MOSFET
(HOTTECH)
Plastic-Encapsulate Mosfets
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
0.042 at VGS = 10 V 40
0.051 at VGS = 4.5 V
ID (A)a 5.6 5.1
Qg (Typ.) 2.9 nC
AP.
SI2318A - N-Channel MOSFET
(MCC)
Features
• Trench Power LV MOSFET Technology • High Power and Current Handing Capability • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensit.
SI2318A - SOT-23-3L Plastic-Encapsulate MOSFET
(UMW)
UMW R
UMW SI2318A
SOT-23-3L Plastic-Encapsulate MOSFETS
■ Features
● VDS (V) = 40V ● ID = 5.6 A (VGS = 10V) ● RDS(ON) ＜ 42mΩ (VGS = 10V) ● RDS(ON) ＜.
Si2318DS - N-Channel 40-V (D-S) MOSFET
(Vishay)
N-Channel 40-V (D-S) MOSFET
Si2318DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) 40
RDS(on) (Ω) 0.045 at VGS = 10 V 0.058 at VGS = 4.5 V
ID (A) 3.9 .
SI2318DS-T1-GE3 - N-Channel MOSFET
(VBsemi)
SI2318DS-T1-GE3 SI2318DS-T1-GE3 Datasheet
N-Channel 30-V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.030 at VGS = 10 V 30
0.
SI2310 - N-channel FET
(MCC)
MCC R
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth # $
% # .
SI2310 - N-Channel Power MOSFET
(CCSemi)
MOSFET
N-Channel Power MOSFET
SI2310
Features
◆ Simple Drive Requirement ◆ Small Package Outline ◆ Surface Mount Device
Absolute Maximum Ratings Ta=2.
SI2310 - N-channel MOSFET
(PUOLOP)
SI2310
20V N-Channel Enhancement Mode MOSFET
VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A < 28mΩ RDS(ON) Vgs@2 5V, Ids@4 5A < 35mΩ
Features Advanced trench p.
SI2311DS - P-Channel MOSFET
(Vishay Siliconix)
P-Channel 1.8-V (G-S) MOSFET
Si2311DS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.045 at VGS = - 4.5 V - 8 0.072 at VGS = - 2.5 V
0.1.
