SI2318CDS-T1-GE3 Datasheet - VBsemi

SI2318CDS-T1-GE3, N-Channel MOSFET

SI2318CDS-T1-GE3 www.VBsemi.com SI2318CDS-T1-GE3 N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 10 V 30 0.033 at.

datasheet Preview Page 1 from Datasheet4u.com

SI2318CDS-T1-GE3-VBsemi.pdf

SI2318CDS-T1-GE3 Datasheet Preview — Preview of SI2318CDS-T1-GE3 PDF

Datasheet Details

Part number:

SI2318CDS-T1-GE3

Manufacturer:

VBsemi

File Size:

308.97 KB

Description:

N-Channel MOSFET

Features

* Halogen-free According to IEC 61249-2-21 Definition
* TrenchFET® Power MOSFET
* 100 % Rg Tested

Applications

* DC/DC Converter D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Dra

SI2318CDS-T1-GE3 Distributors

📁 Related Datasheet

SI2318CDS SI2318 SI2318A Si2318DS SI2310 SI2311DS

📌 All Tags

SI2318CDS-T1-GE3 N-Channel MOSFET VBsemi

VBsemi SI2318CDS-T1-GE3-like datasheet