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N0131SJ160 - Phase Control Thyristor Stud
Phase Control Thyristor Stud Types N0131S#120 to N0131S#160 The data sheet on the subsequent pages of this document is a scanned copy of existing data.HYB5118160BSJ-70 - 1M x 16-Bit Dynamic RAM
1M x 16-Bit Dynamic RAM (1k-Refresh) HYB5118160BSJ-50/-60/-70 Advanced Information • • • 1 048 576 words by 16-bit organization 0 to 70 °C operatin.FSJ9160D - P-Channel Power MOSFETs
June 1998 FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features • 44A, -100V, rDS(ON) = 0.055Ω • Tota.FSJ9160R - P-Channel Power MOSFETs
June 1998 FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features • 44A, -100V, rDS(ON) = 0.055Ω • Tota.FSJ160D - N-Channel Power MOSFETs
FSJ160D, FSJ160R June 1998 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features • 70A, 100V, rDS(ON) = 0.022Ω • Total D.FSJ160R - N-Channel Power MOSFETs
FSJ160D, FSJ160R June 1998 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features • 70A, 100V, rDS(ON) = 0.022Ω • Total D.HYB3116160BSJ - 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
1M x 16-Bit Dynamic RAM (1k & 4k -Refresh) HYB3116160BSJ/BST(L)-50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70 Advanced Information • • • 1 048 576 wor.HYB3116160BSJ-50 - 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
1M x 16-Bit Dynamic RAM (1k & 4k -Refresh) HYB3116160BSJ/BST(L)-50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70 Advanced Information • • • 1 048 576 wor.HYB3116160BSJ-60 - 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
1M x 16-Bit Dynamic RAM (1k & 4k -Refresh) HYB3116160BSJ/BST(L)-50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70 Advanced Information • • • 1 048 576 wor.HYB3116160BSJ-70 - 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
1M x 16-Bit Dynamic RAM (1k & 4k -Refresh) HYB3116160BSJ/BST(L)-50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70 Advanced Information • • • 1 048 576 wor.HYB3118160BSJ-50 - 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
1M x 16-Bit Dynamic RAM (1k & 4k -Refresh) HYB3116160BSJ/BST(L)-50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70 Advanced Information • • • 1 048 576 wor.HYB3118160BSJ-50 - 1M x 16-Bit Dynamic RAM 1k Refresh
1M x 16-Bit Dynamic RAM (1k & 4k -Refresh) HYB3116160BSJ/BST(L)-50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70 Advanced Information • • • 1 048 576 wor.HYB3118160BSJ-60 - 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
1M x 16-Bit Dynamic RAM (1k & 4k -Refresh) HYB3116160BSJ/BST(L)-50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70 Advanced Information • • • 1 048 576 wor.HYB3118160BSJ-60 - 1M x 16-Bit Dynamic RAM 1k Refresh
1M x 16-Bit Dynamic RAM (1k & 4k -Refresh) HYB3116160BSJ/BST(L)-50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70 Advanced Information • • • 1 048 576 wor.HYB3118160BSJ-70 - 1M x 16-Bit Dynamic RAM 1k & 4k -Refresh
1M x 16-Bit Dynamic RAM (1k & 4k -Refresh) HYB3116160BSJ/BST(L)-50/-60/-70 HYB3118160BSJ/BST(L)-50/-60/-70 Advanced Information • • • 1 048 576 wor.SJD12C160L01 - Electrostatic Discharged Protection Devices
SJD12A(C)XXL01 SERIES Electrostatic Discharged Protection Devices (ESD) Data Sheet Description The SJD12A(C)XXL01 series are designed to protect vol.SJD12A160L01 - Electrostatic Discharged Protection Devices
SJD12A(C)XXL01 SERIES Electrostatic Discharged Protection Devices (ESD) Data Sheet Description The SJD12A(C)XXL01 series are designed to protect vol.2SJ160 - P-Channel MOSFET
2SJ160, 2SJ161, 2SJ162 Silicon P-Channel MOS FET Application Low frequency power amplifier Complementary pair with 2SK1056, 2SK1057 and 2SK1058 Feat.M0334SJ160 - Soft Recovery Diode
Date:- 6 Nov, 2014 Data Sheet Issue:- 2 Soft Recovery Diode Type M0334S/R#160 to M0334S/R#200 Absolute Maximum Ratings VRRM VRSM VOLTAGE RATINGS R.