SK240 Datasheet | Specifications & PDF Download

2SK2400 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2400 Chopper Regulator, DC−DC Converter and Motor Drive Application

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: 2SK240 SILICON N CHANNEL JUNCTION TYPE LOW NOISE AUDIO AMPLIFIER APPLICATIONS. DIFFERENTIAL AMPLIFIER APPLICATIONS. FEATURES • Recommended for

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ISK Series 0.25 Watt • xxxSingle Output Series • SMD Package • Industry Standard Pinout • Operating Temperature 40 °C to +105 °C • 1500 VDC Isolation

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2SK2401 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2401 Chopper Regulator, DC−DC Converter and Motor Drive Applications

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2SK2401 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2401 Chopper Regulator, DC−DC Converter and Motor Drive Applications

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Ordering number : EN5251A 2SK2406 SANYO Semiconductors DATA SHEET 2SK2406 Features • Low ON-resistance. • Ultrahigh-speed switching. • High-speed d

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed ·Minimum Lo

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Fast Switching Speed ·Minimum Lo

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Ordering number : EN8603 2SK2405 SANYO Semiconductors DATA SHEET 2SK2405 Features • Built-in FRD. • 10V drive. N-Channel Silicon MOSFET General-Pu

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Elektronische Bauelemente SK240LFL 40V, 2A Schottky Barrier Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATUR

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2SK2408 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance Built-in fast recovery diode (trr = 12

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2409 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2409 is N-Channel MOS Field Effe

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TOSHIBA Field Effect Transistor GaAs N-Channel Dual Gate MES Type 3SK240 3SK240 TV Tuner, UHF RF Amplifier Applications Unit: mm Maximum Ratings (

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·Minimum Lot

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isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 3.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Fast Switching Speed ·Minimum L

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CYStech Electronics Corp. 2.0Amp. Surface Mount Schottky Barrier Diodes Spec. No. : C347SC Issued Date : 2011.05.30 Revised Date : Page No. : 1/ 5 S

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CYStech Electronics Corp. 2.0Amp. Surface Mount Schottky Barrier Diodes Spec. No. : C347SC Issued Date : 2011.05.30 Revised Date : Page No. : 1/ 5 S

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2SK2408 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • Built-in fast recovery diode (trr = 120 ns typ

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Elektronische Bauelemente SK240LFL-C 40V, 2A Low VF Schottky Barrier Rectifiers RoHS Compliant Product A suffix of “-C” specifies halogen & lead-fre

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