VBsemi
2SK2715 - Power MOSFET
2SK2715
Power MOSFET
www.VBsemi.tw
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
650
VGS = 10 V
1.8
48
1
(60 views)
Toshiba Semiconductor
K2700 - 2SK2700
2SK2700
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSIII)
2SK2700
Chopper Regulator, DC–DC Converter and Motor Drive Applications
(56 views)
NEC
K2723 - 2SK2723
DATA SHEET
MOS Field Effect Power Transistors
2SK2723
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
PACKAGE DIMENSIONS (in millimeter)
10.0 ± 0.3
(55 views)
Toshiba Semiconductor
K2718 - 2SK2718
2SK2718
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2718
DC−DC Converter and Motor Drive Applications
z Low drain−source
(46 views)
Toshiba
2SK270 - Silicon N-Channel Transistor
2SK270
SILICON MONOLITHIC N CHANNEL JUNCTION TYPE
LOW NOISE AUDIO AND DIFFERENTIAL
AMPLIFIER APPLICATIONS.
FEATURES
. 1 Chip Dual Type.
. Recomm
(29 views)
Toshiba
K2749 - 2SK2749
2SK2749
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2749
Chopper Regulator, DC−DC Converter and Motor Drive Applications
(26 views)
Toshiba Semiconductor
K2789 - 2SK2789
2SK2789
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV)
2SK2789
Chopper Regulator, DC−DC Converter and Motor Drive Application
(23 views)
Shindengen Electric
K2799 - 2SK2799
SHINDENGEN
VX-2 Series Power MOSFET
N-Channel Enhancement type
2SK2799
(F10F35VX2)
350V 10A
OUTLINE DIMENSIONS
Case : FTO-220
(Unit : mm)
FEATURE
(23 views)
Hitachi
K2728 - 2SK2728
2SK2728
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • High speed switching • Low drive current • Avalanche rati
(22 views)
Toshiba Semiconductor
2SK2717 - Silicon N-Channel MOSFET
2SK2717
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2717
DC−DC Converter and Motor Drive Applications
Unit: mm
l Low d
(21 views)
Hitachi Semiconductor
K2737 - 2SK2737
2SK2737
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 10 mΩ typ.
• 4V gate drive devices. • High speed
(21 views)
Toshiba Semiconductor
2SK2746 - N-Channel MOSFET
2SK2746
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2746
DC−DC Converter and Motor Drive Applications
z Low drain−sourc
(20 views)
Toshiba Semiconductor
K2782 - 2SK2782
(20 views)
Hitachi Semiconductor
K2796 - 2SK2796
2SK2796(L), 2SK2796(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS(on) = 0.12Ω typ.
• 4V gate drive devices
(20 views)
Toshiba Semiconductor
K2746 - 2SK2746
2SK2746
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2746
DC−DC Converter and Motor Drive Applications
z Low drain−sourc
(19 views)
Sanken
K2708 - 2SK2708
2SK2708
External dimensions 1 FM20
Absolute Maximum Ratings (Ta = 25ºC)
Symbol
Ratings
Unit
VDSS
600 V
VGSS
±30 V
ID
*ID (pulse) 1
±
(19 views)
Fuji Electric
2SK2761-01MR - N-channel MOS-FET
2SK2761-01MR
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guaran
(18 views)
Fuji Electric
2SK2765-01 - N-channel MOS-FET
2SK2765-01
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante
(18 views)
Toshiba
K2777 - 2SK2777
2SK2777
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-−MOSV)
2SK2777
Chopper Regulator, DC−DC Converter and Motor Drive Applications
(18 views)
Fuji Electric
2SK2765 - N-channel MOS-FET
2SK2765-01
FAP-IIS Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarante
(17 views)