DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit .
2SK3048 - Silicon N-Channel Power F-MOS FET
Power F-MOS FETs 2SK3048 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistan.SK3050C - (SK3040C - SK30100C) 3 Amp Schottky Barrier Rectifiers
DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Low switching noise Low forward.SK3060C - (SK3040C - SK30100C) 3 Amp Schottky Barrier Rectifiers
DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Low switching noise Low forward.SK3045 - (SK3xxx) Bipolar Transistors
www.DataSheet4U.com www.DataSheet4U.com .K3048 - 2SK3048
Power F-MOS FETs 2SK3048 www.DataSheet4U.com Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switch.SK3040 - MINIATURE SCHOTTKY BARRIER RECTIFIER
SR3020 thru SR3060 SK3020 thru SK3060 MINIATURE SCHOTTKY BARRIER RECTIFIER CHENG- YI ELECTRONIC VOLTAGE RANGE 20 TO 60 Volts CURRENT 30.0 Amperes TO.K3047 - 2SK3047
Power F-MOS FETs 2SK3047 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q H.2SK304 - Silicon N Channel Junction FETs
Silicon N Channel Junction FETs LH03 series of products interconvertible 2SK304 2SK304 D Symbol Applications For charge sensor, meter amplifier ci.2SK3042 - Silicon N-Channel Power F-MOS FET
Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 45mJ q High-speed switching: tf =.2SK3043 - Silicon N-Channel Power F-MOS FET
Power F-MOS FETs 2SK3043 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q .2SK3044 - Silicon N-Channel Power F-MOS FET
Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = ±30V guaranteed q .2SK3045 - Silicon N-Channel Power F-MOS FET
Power F-MOS FETs 2SK3045 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15.6mJ q VGSS = ±30V guaranteed q.2SK3046 - Silicon N-Channel Power F-MOS FET
Power F-MOS FETs 2SK3046 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = ±30V guaranteed q .2SK3047 - Silicon N-Channel Power F-MOS FET
Power F-MOS FETs 2SK3047 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15mJ q VGSS = ±30V guaranteed q H.2SK3049 - Silicon N-Channel Power F-MOS FET
Power F-MOS FETs 2SK3049 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistan.SK304 - (SK302 - SK310) RECTIFIER DIODE
DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Data Sheet No. SBDA-302-1B 3 AM.SK3040C - (SK3040C - SK30100C) 3 Amp Schottky Barrier Rectifiers
DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Low switching noise Low forward.SK3070C - (SK3040C - SK30100C) 3 Amp Schottky Barrier Rectifiers
DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Low switching noise Low forward.SK30100C - (SK3040C - SK30100C) 3 Amp Schottky Barrier Rectifiers
DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: (310) 767-1052 Fax: (310) 767-7958 Low switching noise Low forward.