SK38 Datasheet | Specifications & PDF Download

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MOS FET 2SK3800 Absolute Maximum Ratings (Ta=25ºC) Symbol Ratings Unit VDSS 40 V VGSS ±20 V ID ±70 A ID (pulse)*1 ±140 A PD EAS*2 80

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LM1875 www.ti.com SNAS524A – MAY 2004 – REVISED MAY 2004 LM1875 20W Audio Power Amplifier Check for Samples: LM1875 FEATURES 1 •2 Up to 30 Watts O

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2SK3845 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII) 2SK3845 Switching Regulator, DC-DC Converter Applications and Motor Dri

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MASK32~MASK310 Surface Mount Schottky Rectifiers Features ● ● ● ● ● ● ● Low profile package Ideal for automated placement Ultrafast reverse recovery

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MOS FET 2SK3801 Absolute Maximum Ratings (Ta=25ºC) Symbol Ratings Unit VDSS 40 V VGSS ±20 V ID ±70 A ID (pulse)*1 ±140 A PD EAS*1 10

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2SK3870-01 N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Super FAP-G Series Outline Drawings (mm) 200406 TO-220AB Features High speed switching N

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2SK3889-01L,S,SJ om N-CHANNEL SILICON POWER MOSFET e Series Super FAP-G e h S Features a High speed at switching Low on-resistance D breakdown Low dr

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DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK3811 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3811 is N-channel MOS Fiel

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Ordering number : ENN8193 2SK3850 2SK3850 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Best suited for motor

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2SK3843 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U−MOSIII) 2SK3843 Switching Regulator, DC/DC Converter and Motor Drive Applicatio

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isc N-Channel MOSFET Transistor 2SK3816S FEATURES ·Drain Current : ID= 40A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Re

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: 2SK386 ) SILICON N CHANNEL MOS TYPE (7T-MOS) HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE

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Ordering number : ENN8053 2SK3815 2SK3815 Features • • • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resist

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Ordering number : ENN8028 2SK3831 N-Channel Silicon MOSFET 2SK3831 General-Purpose Switching Device Applications Features • Low ON-resistance. • Ult

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isc N-Channel MOSFET Transistor 2SK385 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 400V(Min) ·Fast Switching Speed ·Mi

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Ordering number : EN8637 2SK3835 2SK3835 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Ultrahigh-speed switchi

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