SM19 Datasheet | Specifications & PDF Download

www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1901-10 GSM1900 EDGE power module Product specification Supersedes data of 2003 No

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B CA D G H H E F

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Technical Data : AD-030 PST Page 1 of 2 SM**CXC224 - Fast Recovery Rectifier 1500 - 2000 VRRM;875 A avg *******************************************

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GSM1912 20V N-Channel Enhancement Mode MOSFET Product Description GSM1912, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to prov

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HSM198S Silicon Schottky Barrier Diode forVarious Detector, High speed switching ADE-208-090B (Z) Rev. 2 Jun. 1993 Features • • • • Detection efficie

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SIMOPAC® Module BSM 191 VDS = 1000 V ID = 28 A R DS(on) = 0.37 Ω q q q q q q Power module Single switch N channel Enhancement mode Package with ins

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SIMOPAC® Module BSM 191 F VDS = 1000 V ID = 28 A R DS(on) = 0.42 Ω q q q q q q q Power module Single switch FREDFET N channel Enhancement mode Pack

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GP-WSM Series PPTC Thermistors (PPTC Resettable Fuses) Shenzhen Goodpoly Electron Co., Ltd. ¡÷ ¡÷ ¡÷ Radial leaded devices Very high voltage surge c

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TSM19N20 200V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 200 RDS(on)(mΩ) 92 @ VGS =10V

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TSM190N08 75V N-Channel Power MOSFET TO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 75 RDS(on)(mΩ) 4.2 @ VGS =10V ID (A)

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SM1901PSQG P-Channel Enhancement Mode MOSFET Features • -20V/-1A RDS(ON)=525mΩ(max.)@VGS=-4.5V RDS(ON)=840mΩ(max.)@VGS=-2.5V RDS(ON)=1450mΩ(max.)@VG

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ATA-Disk Module SST58SM008 / 016 / 024 / 032 / 048 / 064 / 096 / 128 / 192 SST58LM008 / 016 / 024 / 032 / 048 / 064 / 096 / 128 / 192 SST58SM/LMxxxATA

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TSM19N20 200V N-Channel Power MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 200 RDS(on)(mΩ) 92 @ VGS =10V

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