TSM190N08 - 75V N-Channel Power MOSFET

Taiwan Semiconductor

Datasheet Details

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Advanced Trench Technology Low RDS(ON) 4.2mΩ (Max. ) Low gate charge typical @ 160nC (Typ. ) Low Crss typical @ 300pF (Typ. ) Block Diagram Ordering Information Part No. TSM190N08CZ C0 Package TO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC=25° C TC=70° C TA=25° C TA=70° C Drain Current-Pulsed Note 1 Avalanche Current, L=0.3mH Avalanche Energy, L=0.3mH TC=25° C.

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