TSM10N80CZ, TSM10N80 - 800V N-Channel Power MOSFET

Taiwan Semiconductor

Datasheet Details

Part number	TSM10N80CZ, TSM10N80
Manufacturer	Taiwan Semiconductor
File Size	497.95 KB
Description	800V N-Channel Power MOSFET
Datasheet	TSM10N80-TaiwanSemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: TSM10N80CZ, TSM10N80. Please refer to the document for exact specifications by model.

The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

Low RDS(ON) 1.05Ω (Max. ) Low gate charge typical @ 53nC (Typ. ) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM10N80CZ C0 TSM10N80CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pc / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current.
Peak Diode Recovery dv/dt (Note 3) Single Pulse Avalanche Energy (Note 2) Avalanch.

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Published: Jul 10, 2014 |