TSM100N06 Datasheet, Mosfet, Taiwan Semiconductor

TSM100N06 Features

• Mosfet
• Advanced Trench Technology
• Low RDS(ON) 6.7mΩ (Max.)
• Low gate charge typical @ 81nC (Typ.)
• Low Crss typical @ 339pF (Typ.) Ordering Information

PDF File Details

Part number:

TSM100N06

Manufacturer:

Taiwan Semiconductor

File Size:

608.48kb

Download:

📄 Datasheet

Description:

60v n-channel power mosfet.

TAGS

TSM100N06

Taiwan Semiconductor

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