* Advanced Trench Technology
* Low RDS(ON) 6.7mΩ (Max.)
* Low gate charge typical @ 81nC (Typ.)
* Low Crss typical @ 339pF (Typ.) Ordering Information Part No. TSM100N06CZ C0G Package TO-220 Packing 50pcs / Tube Note: “G” denote for Halogen Free Product Block Diagram N-Channe
TSM100N06 Datasheet (608.48 KB)
TSM100N06
Taiwan Semiconductor
608.48 KB
60v n-channel power mosfet.
TO-220
Pin Definition: 1. Gate 2. Drain 3. Source
TSM100N06
60V N-Channel Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on)(mΩ)
60 6.7 @ VGS =10V
ID.
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