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TSM10N80

800V N-Channel Power MOSFET

TSM10N80 Features

* Low RDS(ON) 1.05Ω (Max.) Low gate charge typical @ 53nC (Typ.) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM10N80CZ C0 TSM10N80CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pc / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless ot

TSM10N80 General Description

The TSM10N80 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The.

TSM10N80 Datasheet (497.95 KB)

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Datasheet Details

Part number:

TSM10N80

Manufacturer:

Taiwan Semiconductor

File Size:

497.95 KB

Description:

800v n-channel power mosfet.
TSM10N80 800V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 800 1.05 @ VGS =10V.

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TSM10N80 800V N-Channel Power MOSFET Taiwan Semiconductor

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