TSM19N20CP Datasheet, Mosfet, Taiwan Semiconductor

✔ TSM19N20CP Features

Advanced Trench Technology Low RDS(ON) 92mΩ (Max.) Low gate charge typical @ 55nC (Typ.) Low Crss typical @ 73pF (Typ.) Block Diagram Ordering Information Part

✔ TSM19N20CP Application

Customers using or selling these products for use in such applications do so at their own risk and agree to

PDF File Details

Taiwan Semiconductor manufacturer logo

Part number:

TSM19N20CP

Manufacturer:

Taiwan Semiconductor

File Size:

88.62 KB

Download:

📄 Datasheet

Description:

200v n-channel power mosfet. only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s te

📥 Download PDF (88.62 KB)

📁 Related Datasheet

TSM19N20 - 200V N-Channel Power MOSFET (Taiwan Semiconductor)

TSM190N08 - 75V N-Channel Power MOSFET (Taiwan Semiconductor)

TSM100 - SINGLE OPERATIONAL AMPLIFIER AND SINGLE COMPARATOR (STMicroelectronics)

TSM100 - Surface Mount Devices (SPSEMI)

TSM100-33 - Surface Mount Devices (SPSEMI)

TSM100I - SINGLE OPERATIONAL AMPLIFIER AND SINGLE COMPARATOR (STMicroelectronics)

TSM100N06 - 60V N-Channel Power MOSFET (Taiwan Semiconductor)

TSM101 - VOLTAGE AND CURRENT CONTROLLER (STMicroelectronics)

TAGS

TSM19N20CP 200V N-Channel Power MOSFET Taiwan Semiconductor