SMBT3904 Datasheet | Specifications & PDF Download

www.DataSheet4U.com ISSUED DATE :2005/06/08 REVISED DATE : GSM BT 3904 Description Package Dimensions NP N EP ITAXI AL P L ANAR T RANS ISTO R The G

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SMBT 3904S NPN Silicon Switching Transistor Array • High DC current gain: 0.1mA to 100mA • Low collector-emitter saturation voltage • Two ( galvanic)

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MBT3904DW1, MBT3904DW2, SMBT3904DW1, NSVMBT3904DW1 Dual General Purpose Transistors The MBT3904DW1 and MBT3904DW2 devices are a spin−off of our popu

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NPN Silicon Switching Transistor High DC current gain: 0.1 mA to 100 mA q Low collector-emitter saturation voltage q Complementary type: SMBT 3906 (PN

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SMBT3904U NPN Silicon Switching Transistor Array
High DC current gain: 0.1mA to 100mA
Low collector-emitter saturation voltage
Two ( galvanic) i

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SMBT3904UPN NPN/PNP Silicon Switching Transistor Array
High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolat

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NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic)

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SMBT3904PN NPN/PNP Silicon Switching Transistor Array
High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolate

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NPN Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3904S: Two (galvanic)

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