SPD30N03 Datasheet | Specifications & PDF Download

OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resi

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isc N-Channel MOSFET Transistor SPD30N03S2L,ISPD30N03S2L ·FEATURES ·Static drain-source on-resistance: RDS(on)≤10mΩ ·Enhancement mode: ·100% avalanch

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OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resi

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SPD30N03L SIPMOS® Power Transistor Features • N channel • Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Cont

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www.DataSheet4U.com SIPMOS® Power Transistor Features • N channel • SPD 30N03 30 30 V A Product Summary Drain source voltage Drain-Source on-state

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OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (

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OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Low On-Resistance RDS(on) • Excellent Gate Charge x RDS(on) product (

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OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resi

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OptiMOS® Power-Transistor Feature • N-Channel • Enhancement mode • Logic Level • Excellent Gate Charge x RDS(on) product (FOM) • Superior thermal resi

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