SS1 Datasheet | Specifications & PDF Download

Power Diodes Controlled Avalanche Features: • • • • • • • For surface mounted application Metal to silicon rectifier, majority carrier conduction Low

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BSS138K 50V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 0.31A Description and Appl

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RSS105N03 Transistor Switching (30V, ±10.5A) RSS105N03 zFeatures 1) Low on-resistance. www.DataSheet4U.com 2) Built-in G-S Protection Diode. 3) Small

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FEATURES • High Reliability Proven Design • DCR4160A42 • Forced Air Cooling • Redundant Fan (Optional) • RC Snubber • Pressure Switch • IR Temperature

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Power Diodes Controlled Avalanche Features: • • • • • • • For surface mounted application Metal to silicon rectifier, majority carrier conduction Low

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GP400LSS18 GP400LSS18 Single Switch IGBT Module DS5305-2.0 November 2000 FEATURES s s s s Non Punch Through Silicon Isolated Copper Baseplate Low I

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® WON-TOP ELECTRONICS SS12 – S100 1.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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GP1600FSS18 GP1600FSS18 Single Switch IGBT Module Replaces January 2000 version, DS5136-3.0 DS5176-4.2 January 2001 FEATURES s s s s Non Punch Thro

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1SS133 Diodes Switching diode 1SS133 Applications High speed switching External dimensions (Units : mm) CATHODE BAND (YELLOW) φ0.4±0.1 Features 1

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http://www.ncepower.com Pb Free Product BSS138K NCE N-Channel Enhancement Mode Power MOSFET General Features ● VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @

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GP1600FSS12 GP1600FSS12 Powerline N-Channel Single Switch IGBT Module Advance Information Replaces October 1999 version, DS5173-3.0 DS5173-4.0 Januar

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GSS1A Series Surface Mount Standard Recovery Glass Passivated Product Description Reverse Voltage 50V to 1000V Forward Current 1.0A Features „ High

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BSS 101 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8 2.0V Pin 1 S Type BSS 101 Type BSS 101 BSS

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www.DataSheet4U.com DIM600BSS12-A000 DIM600BSS12-A000 Single Switch IGBT Module Replaces February 2004 version, issue PDS5692-2.0 DS5692-3.0 June 20

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www.DataSheet4U.com NSS12200LT1G 12 V, 4.0 A, Low VCE(sat) PNP Transistor ON Semiconductor’s e2 PowerEdge family of low VCE(sat) transistors are mini

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NSS12100M3T5G 12 V, 1 A, Low VCE(sat) PNP Transistor ON Semiconductor's e2 PowerEdge family of low VCE(sat) transistors are miniature surface mount de

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1SS119 Silicon Epitaxial Planar Diode for High Speed Switching REJ03G0564-0300 (Previous: ADE-208-180B) Rev.3.00 Mar 23, 2005 Features • Low capacita

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Products / SMD Type Functional Polymer Aluminum Solid Electrolytic Capacitors SS & SA & SB series Large Capacitance Low ESR φ6.3 zFeatures By us

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1SS181 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applicatio

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