SS139 Datasheet | Specifications & PDF Download

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SIPMOS® Small-Signal-Transistor Features • N-channel • Depletion mode • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead-platin

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LBSS139LT1G www.VBsemi.com LBSS139LT1G Datasheet N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 2.8 at VGS = 10 V SOT-23

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- These N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially T

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SIPMOS® Small-Signal Transistor q q q q q q q BSS 139 VDS 250 V ID 0.04 A RDS(on) 100 Ω N channel Depletion mode High dynamic resistance Available g

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GSMBSS139 50V N-Channel MOSFETs Product Description These N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology.

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Public BSS139I Final datasheet Small‑Signal Transistor Features • N‑channel • Depletion mode • dv/dt rated • Halogen free according to IEC61249‑2‑21

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GSMBSS139Y Dual N-Channel Enhancement MOSFET Product Description These Dual N-Channel Enhancement Mode Power Field Effect Transistors are Using Trenc

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Ordering number : ENN7019 FSS139 P-Channel Silicon MOSFET FSS139 Load Switching Applications Features • • • Package Dimensions unit : mm 2116 [FSS1

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SS139 Unipolar Hall Switch-Low Sensitivity Packages Features and Benefits – – – – – – – – 3.5V to 24V Operation -40℃ to 150℃ Superior temperature op

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