GSMBSS139W - 60V N-Channel MOSFET

Globaltech

Datasheet Details

Part number	GSMBSS139W
Manufacturer	Globaltech
File Size	1.32 MB
Description	60V N-Channel MOSFET
Datasheet	GSMBSS139W Datasheet
Additional preview pages of the GSMBSS139W datasheet.

📁 Similar Datasheet

GSMBD2004 - SWITCHING DIODE (GTM)
GSMBD4148 - SWITCHING DIODE (GTM)
GSMBR0520 - Schottky Barrier Diode (GOOD-ARK)
GSMBR0530 - Schottky Barrier Diode (GOOD-ARK)
GSMBR0540 - Schottky Barrier Diode (GOOD-ARK)
GSMBR0560 - Schottky Barrier Diode (GOOD-ARK)
GSMBR0580 - Schottky Barrier Diode (GOOD-ARK)
GSMBRD20100 - Surface Mount Schottky Rectifiers (GOOD-ARK)
GSMBRD20150 - Surface Mount Schottky Rectifiers (GOOD-ARK)
GSMBRD20200 - Surface Mount Schottky Rectifiers (GOOD-ARK)

Other Datasheets by Globaltech

GSMBSS139 - N-Channel MOSFET
GSMBSS139Y - Dual N-Channel Enhancement MOSFET
GSMBSS123 - N-Channel MOSFET
GSMBSS84 - 60V P-Channel Enhancement Mode MOSFET
GSM02N15 - N-Channel MOSFET
GSM02P15 - P-Channel MOSFET
GSM02P15JZF - P-Channel MOSFET
GSM0910P - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text

- These N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching - Performance, and Withstand high Energy Pulse in the Avalanche and Commutation mode. These Devices are well Suited for High Efficiency Fast Switching Applications.

Published: Oct 15, 2024 |