GSMBSS139W Datasheet - Globaltech

GSMBSS139W 60V N-Channel MOSFET

- These N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching - Performance, and Withstand high Energy Pulse in the Avalanche and Commutation mode. These Devices are well Suited for High Efficiency Fast Switching Applications. Packages & Pin Assignments GSMBSS139WX5F (SOT-323) Ordering Information - - Absolute - - - - - - - - -.

GSMBSS139W Datasheet (1.32 MB)